中国物理B ›› 2010, Vol. 19 ›› Issue (3): 38101-038101.doi: 10.1088/1674-1056/19/3/038101

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Analysis of heating effect on the process of high deposition rate microcrystalline silicon

张晓丹, 张鹤, 魏长春, 孙建, 侯国付, 熊绍珍, 耿新华, 赵颖   

  1. Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic Information Science and Technology (Nankai University),
  • 收稿日期:2009-06-21 修回日期:2009-07-30 出版日期:2010-03-15 发布日期:2010-03-15
  • 基金资助:
    Project supported by Hi-Tech Research and Development Program of China (Grant Nos.~2007AA05Z436 and 2009AA050602), Science and Technology Support Project of Tianjin (Grant No. 08ZCKFGX03500), National Basic Research Program of China (Grant Nos.~2006CB202602 and 2006CB202603), National Natural Science Foundation of China (Grant No.~60976051), International Cooperation Project between China--Greece Government (Grant Nos.~2006DFA62390 and 2009DFA62580), and Program for New Century Excellent Talents in University of China (Grant No.~NCET-08-0295).

Analysis of heating effect on the process of high deposition rate microcrystalline silicon

Zhang Xiao-Dan(张晓丹)†,Zhang He(张鹤),Wei Chang-Chun(魏长春), Sun Jian(孙建), Hou Guo-Fu(侯国付), Xiong Shao-Zhen(熊绍珍),Geng Xin-Hua(耿新华), and Zhao Ying(赵颖)   

  1. Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic Information Science and Technology (Nankai University), Ministry of Education, Tianjin 300071, China
  • Received:2009-06-21 Revised:2009-07-30 Online:2010-03-15 Published:2010-03-15
  • Supported by:
    Project supported by Hi-Tech Research and Development Program of China (Grant Nos.~2007AA05Z436 and 2009AA050602), Science and Technology Support Project of Tianjin (Grant No. 08ZCKFGX03500), National Basic Research Program of China (Grant Nos.~2006CB202602 and 2006CB202603), National Natural Science Foundation of China (Grant No.~60976051), International Cooperation Project between China--Greece Government (Grant Nos.~2006DFA62390 and 2009DFA62580), and Program for New Century Excellent Talents in University of China (Grant No.~NCET-08-0295).

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摘要： A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied. It includes the discharge time-accumulating heating effect, discharge power, inter-electrode distance, and total gas flow rate induced heating effect. It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other. However, all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films, which will affect the properties of the materials with increasing time. This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed. Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon, it is proposed that the discharge power and the heating temperature should be as low as possible, and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated.

Abstract: A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied. It includes the discharge time-accumulating heating effect, discharge power, inter-electrode distance, and total gas flow rate induced heating effect. It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other. However, all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films, which will affect the properties of the materials with increasing time. This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed. Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon, it is proposed that the discharge power and the heating temperature should be as low as possible, and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated.

Key words: high pressure and high power, microcrystalline silicon, heating effect

中图分类号:  (Elemental semiconductors)

  • 81.05.Cy
68.55.A- (Nucleation and growth) 81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)