中国物理B ›› 1994, Vol. 3 ›› Issue (9): 702-707.doi: 10.1088/1004-423X/3/9/008
李玉芝, 李铁, 许存义, 周贵恩, 张裕恒
LI YU-ZI (李玉芝), LI TIE (李铁), XU CUN-YI (许存义), ZHOU GUI-EN (周贵恩), ZHANG YU-HENG (张裕恒)
摘要: In this paper, the crystallization behaviors and transport properties are investigated for a-Ge/Bi bilayers annealed at different temperatures. For 200nm/100nm bilayers, it is found that the orientations of Bi in the bilayers annealed at 200℃ and 340℃ are preferred, as well as the original one. But they are random when the bilayers are annealed at tem-peratures between 240℃ and 300℃. For 200nm/50nm bilayers, the orientation of Bi are always preferred. Corresponding to the orientations mentioned above, the minimum on the R(300K)-Ta curve appears only in the case of 200nm/100 nm bilayers.
中图分类号: (Metal-nonmetal contacts)