中国物理B ›› 1994, Vol. 3 ›› Issue (9): 697-701.doi: 10.1088/1004-423X/3/9/007

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THERMALLY ACTIVATED HOPPING IN Dy1-xPrxBa2Cu3O7-δ SYSTEM

曹效文   

  1. Institute of Plasma Physics, Academia Sinica, Hefei 230031, China
  • 收稿日期:1993-09-18 出版日期:1994-09-20 发布日期:1994-09-20

THERMALLY ACTIVATED HOPPING IN Dy1-xPrxBa2Cu3O7-$\delta$ SYSTEM

CAO XIAO-WEN (曹效文)   

  1. Institute of Plasma Physics, Academia Sinica, Hefei 230031, China
  • Received:1993-09-18 Online:1994-09-20 Published:1994-09-20

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摘要： The temperature dependence of resistivity in Dy1-xPrxBa2Cu3O7-δ system with x>0.6 was measured. The experimental results show that Pr substitution leads to the localization of mobile holes and such a localization is enhanced with increasing Pr concentration. The gradually enhancing of localization induces Anderson transitions one by one in this system, including the transition from the conduction by excitation of holes to the one by thermal activation hopping between localized states, the so called Anderson transition type-I, and the transition from nearest neighbor hopping (NNH) to variable range hopping (VRH), the Anderson transition type-II, and the Anderson transition type-lI from 3D to 2D.

Abstract: The temperature dependence of resistivity in Dy1-xPrxBa2Cu3O7-$\delta$ system with x>0.6 was measured. The experimental results show that Pr substitution leads to the localization of mobile holes and such a localization is enhanced with increasing Pr concentration. The gradually enhancing of localization induces Anderson transitions one by one in this system, including the transition from the conduction by excitation of holes to the one by thermal activation hopping between localized states, the so called Anderson transition type-I, and the transition from nearest neighbor hopping (NNH) to variable range hopping (VRH), the Anderson transition type-II, and the Anderson transition type-lI from 3D to 2D.

中图分类号: 

  • 74.25.Fy
74.25.Jb (Electronic structure (photoemission, etc.)) 73.20.Fz (Weak or Anderson localization)