中国物理B ›› 1994, Vol. 3 ›› Issue (9): 702-707.doi: 10.1088/1004-423X/3/9/008

• • 上一篇    下一篇

THE CRYSTALLIZATION OF Bi IN THE ANNEALED a-Ge/Bi BILAYER AND ITS EFFECT ON CONDUCTIVITY

李玉芝, 李铁, 许存义, 周贵恩, 张裕恒   

  1. Laboratory of Structure Analysis University of Science and Technology of China, Academia Sinica, Hefei 230026, China
  • 收稿日期:1993-10-29 出版日期:1994-09-20 发布日期:1994-09-20

THE CRYSTALLIZATION OF Bi IN THE ANNEALED a-Ge/Bi BILAYER AND ITS EFFECT ON CONDUCTIVITY

LI YU-ZI (李玉芝), LI TIE (李铁), XU CUN-YI (许存义), ZHOU GUI-EN (周贵恩), ZHANG YU-HENG (张裕恒)   

  1. Laboratory of Structure Analysis University of Science and Technology of China, Academia Sinica, Hefei 230026, China
  • Received:1993-10-29 Online:1994-09-20 Published:1994-09-20

PDF (PC)

378

赞

摘要： In this paper, the crystallization behaviors and transport properties are investigated for a-Ge/Bi bilayers annealed at different temperatures. For 200nm/100nm bilayers, it is found that the orientations of Bi in the bilayers annealed at 200℃ and 340℃ are preferred, as well as the original one. But they are random when the bilayers are annealed at tem-peratures between 240℃ and 300℃. For 200nm/50nm bilayers, the orientation of Bi are always preferred. Corresponding to the orientations mentioned above, the minimum on the R(300K)-Ta curve appears only in the case of 200nm/100 nm bilayers.

Abstract: In this paper, the crystallization behaviors and transport properties are investigated for a-Ge/Bi bilayers annealed at different temperatures. For 200nm/100nm bilayers, it is found that the orientations of Bi in the bilayers annealed at 200℃ and 340℃ are preferred, as well as the original one. But they are random when the bilayers are annealed at tem-peratures between 240℃ and 300℃. For 200nm/50nm bilayers, the orientation of Bi are always preferred. Corresponding to the orientations mentioned above, the minimum on the R(300K)-Ta curve appears only in the case of 200nm/100 nm bilayers.

中图分类号:  (Metal-nonmetal contacts)

  • 73.40.Ns
61.72.Cc (Kinetics of defect formation and annealing) 73.61.-r (Electrical properties of specific thin films) 68.55.-a (Thin film structure and morphology)