Ferroelectric domain wall memory

doi:10.1088/1674-1056/ace4b6

中国物理B ›› 2023, Vol. 32 ›› Issue (12): 128504-128504.doi: 10.1088/1674-1056/ace4b6

所属专题： SPECIAL TOPIC—Post-Moore era: Materials and device physics

Ferroelectric domain wall memory

Yiming Li(李一鸣), Jie Sun(孙杰)^†, and Anquan Jiang(江安全)^‡

State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China

收稿日期:2023-05-11 修回日期:2023-07-06 接受日期:2023-07-06 出版日期:2023-11-14 发布日期:2023-11-30
通讯作者: Jie Sun, Anquan Jiang E-mail:jie_sun@fudan.edu.cn;aqjiang@fudan.edu.cn
基金资助:
Project supported by the National Key Basic Research Program of China (Grant Nos.2019YFA0308500 and 2022YFA1402900) and the National Natural Science Foundation of China (Grant No.61904034).

Ferroelectric domain wall memory

Yiming Li(李一鸣), Jie Sun(孙杰)^†, and Anquan Jiang(江安全)^‡

State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China

Received:2023-05-11 Revised:2023-07-06 Accepted:2023-07-06 Online:2023-11-14 Published:2023-11-30
Contact: Jie Sun, Anquan Jiang E-mail:jie_sun@fudan.edu.cn;aqjiang@fudan.edu.cn
Supported by:
Project supported by the National Key Basic Research Program of China (Grant Nos.2019YFA0308500 and 2022YFA1402900) and the National Natural Science Foundation of China (Grant No.61904034).

摘要/Abstract

摘要： Ferroelectric domain walls appear as sub-nanometer-thick topological interfaces separating two adjacent domains in different orientations, and can be repetitively created, erased, and moved during programming into different logic states for the nonvolatile memory under an applied electric field, providing a new paradigm for highly miniaturized low-energy electronic devices. Under some specific conditions, the charged domain walls are conducting, differing from their insulating bulk domains. In the past decade, the emergence of atomic-layer scaling solid-state electronic devices is such demonstration, resulting in the rapid rise of domain wall nano-electronics. This review aims to the latest development of ferroelectric domain-wall memories with the presence of the challenges and opportunities and the roadmap to their future commercialization.

关键词: domain wall, memory, ferroelectric

Abstract: Ferroelectric domain walls appear as sub-nanometer-thick topological interfaces separating two adjacent domains in different orientations, and can be repetitively created, erased, and moved during programming into different logic states for the nonvolatile memory under an applied electric field, providing a new paradigm for highly miniaturized low-energy electronic devices. Under some specific conditions, the charged domain walls are conducting, differing from their insulating bulk domains. In the past decade, the emergence of atomic-layer scaling solid-state electronic devices is such demonstration, resulting in the rapid rise of domain wall nano-electronics. This review aims to the latest development of ferroelectric domain-wall memories with the presence of the challenges and opportunities and the roadmap to their future commercialization.

Key words: domain wall, memory, ferroelectric

中图分类号: (Dielectric, ferroelectric, and piezoelectric devices)

85.50.-n

72.20.-i (Conductivity phenomena in semiconductors and insulators) 77.80.-e (Ferroelectricity and antiferroelectricity) 77.84.-s (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)

Yiming Li(李一鸣), Jie Sun(孙杰), and Anquan Jiang(江安全). Ferroelectric domain wall memory[J]. 中国物理B, 2023, 32(12): 128504-128504.

Yiming Li(李一鸣), Jie Sun(孙杰), and Anquan Jiang(江安全). Ferroelectric domain wall memory[J]. Chin. Phys. B, 2023, 32(12): 128504-128504.

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Ferroelectric domain wall memory

Ferroelectric domain wall memory

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