中国物理B ›› 2023, Vol. 32 ›› Issue (6): 67505-067505.doi: 10.1088/1674-1056/acbde8

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Electric-field control of perpendicular magnetic anisotropy by resistive switching via electrochemical metallization

Yuan Yuan(袁源)1, Lu-Jun Wei(魏陆军)2, Yu Lu(卢羽)1, Ruo-Bai Liu(刘若柏)1, Tian-Yu Liu(刘天宇)1, Jia-Rui Chen(陈家瑞)1, Biao You(游彪)1, Wei Zhang(张维)1, Di Wu(吴镝)1, and Jun Du(杜军)1,†   

  1. 1 National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;
    2 New Energy Technology Engineering Laboratory of Jiangsu Provence&School of Science, Nanjing University of Posts and Telecommunications(NUPT), Nanjing 210046, China
  • 收稿日期:2023-01-11 修回日期:2023-02-15 接受日期:2023-02-22 出版日期:2023-05-17 发布日期:2023-05-30
  • 通讯作者: Jun Du E-mail:jdu@nju.edu.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1403602) and the National Natural Science Foundation of China (Grant Nos. 51971109, 52025012, and 52001169).

Electric-field control of perpendicular magnetic anisotropy by resistive switching via electrochemical metallization

Yuan Yuan(袁源)1, Lu-Jun Wei(魏陆军)2, Yu Lu(卢羽)1, Ruo-Bai Liu(刘若柏)1, Tian-Yu Liu(刘天宇)1, Jia-Rui Chen(陈家瑞)1, Biao You(游彪)1, Wei Zhang(张维)1, Di Wu(吴镝)1, and Jun Du(杜军)1,†   

  1. 1 National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;
    2 New Energy Technology Engineering Laboratory of Jiangsu Provence&School of Science, Nanjing University of Posts and Telecommunications(NUPT), Nanjing 210046, China
  • Received:2023-01-11 Revised:2023-02-15 Accepted:2023-02-22 Online:2023-05-17 Published:2023-05-30
  • Contact: Jun Du E-mail:jdu@nju.edu.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1403602) and the National Natural Science Foundation of China (Grant Nos. 51971109, 52025012, and 52001169).

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摘要： Electric-field control of perpendicular magnetic anisotropy (PMA) is a feasible way to manipulate perpendicular magnetization, which is of great importance for realizing energy-efficient spintronics. Here, we propose a novel approach to accomplish this task at room temperature by resistive switching (RS) via electrochemical metallization (ECM) in a device with the stack of Si/SiO$_{2}$/Ta/Pt/Ag/Mn-doped ZnO (MZO)/Pt/Co/Pt/ITO. By applying certain voltages, the device could be set at high-resistance-state (HRS) and low-resistance-state (LRS), accompanied with a larger and a smaller coercivity ($H_{\rm C}$), respectively, which demonstrates a nonvolatile E-field control of PMA. Based on our previous studies and the present control experiments, the electric modulation of PMA can be briefly explained as follows. At LRS, the Ag conductive filaments form and pass through the entire MZO layer and finally reach the Pt/Co/Pt sandwich, leading to weakening of PMA and reduction of $H_{\rm C}$. In contrast, at HRS, most of the Ag filaments dissolve and leave away from the Pt/Co/Pt sandwich, causing partial recovery of PMA and an increase of $H_{\rm C}$. This work provides a new clue to designing low-power spintronic devices based on PMA films.

关键词: electric-field control, resistive switching, perpendicular magnetic anisotropy, electrochemical metallization, magnetoelectric random access memory

Abstract: Electric-field control of perpendicular magnetic anisotropy (PMA) is a feasible way to manipulate perpendicular magnetization, which is of great importance for realizing energy-efficient spintronics. Here, we propose a novel approach to accomplish this task at room temperature by resistive switching (RS) via electrochemical metallization (ECM) in a device with the stack of Si/SiO$_{2}$/Ta/Pt/Ag/Mn-doped ZnO (MZO)/Pt/Co/Pt/ITO. By applying certain voltages, the device could be set at high-resistance-state (HRS) and low-resistance-state (LRS), accompanied with a larger and a smaller coercivity ($H_{\rm C}$), respectively, which demonstrates a nonvolatile E-field control of PMA. Based on our previous studies and the present control experiments, the electric modulation of PMA can be briefly explained as follows. At LRS, the Ag conductive filaments form and pass through the entire MZO layer and finally reach the Pt/Co/Pt sandwich, leading to weakening of PMA and reduction of $H_{\rm C}$. In contrast, at HRS, most of the Ag filaments dissolve and leave away from the Pt/Co/Pt sandwich, causing partial recovery of PMA and an increase of $H_{\rm C}$. This work provides a new clue to designing low-power spintronic devices based on PMA films.

Key words: electric-field control, resistive switching, perpendicular magnetic anisotropy, electrochemical metallization, magnetoelectric random access memory

中图分类号:  (Magnetic properties of thin films, surfaces, and interfaces)

  • 75.70.-i
75.30.Gw (Magnetic anisotropy) 75.75.-c (Magnetic properties of nanostructures) 75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))