中国物理B ›› 2023, Vol. 32 ›› Issue (12): 128505-128505.doi: 10.1088/1674-1056/ad08a5

所属专题： SPECIAL TOPIC—Post-Moore era: Materials and device physics

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Recent progress on ambipolar 2D semiconductors in emergent reconfigurable electronics and optoelectronics

Yuehao Zhao(赵月豪)1,†, Haoran Sun(孙浩然)1,†, Zhe Sheng(盛喆)1,3,†, David Wei Zhang(张卫)1,2, Peng Zhou(周鹏)1,2,‡, and Zengxing Zhang(张增星)1,2,§   

  1. 1 School of Microelectronics, Fudan University, Shanghai 200433, China;
    2 National Integrated Circuit Innovation Center, Shanghai 201203, China;
    3 School of Information Science and Technology, Hangzhou Normal University, Hangzhou 311121, China
  • 收稿日期:2023-07-31 修回日期:2023-10-21 接受日期:2023-11-02 出版日期:2023-11-14 发布日期:2023-11-30
  • 通讯作者: Peng Zhou, Zengxing Zhang E-mail:pengzhou@fudan.edu.cn;zhangzx@fudan.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No.62274037), the National Key Research and Development Program of China (Grant No.2018YFA0703703), the Ministry of Science and Technology of China (Grant No.2018YFE0118300), and the State Key Laboratory of ASIC & System (Grant No.2021MS003).

Recent progress on ambipolar 2D semiconductors in emergent reconfigurable electronics and optoelectronics

Yuehao Zhao(赵月豪)1,†, Haoran Sun(孙浩然)1,†, Zhe Sheng(盛喆)1,3,†, David Wei Zhang(张卫)1,2, Peng Zhou(周鹏)1,2,‡, and Zengxing Zhang(张增星)1,2,§   

  1. 1 School of Microelectronics, Fudan University, Shanghai 200433, China;
    2 National Integrated Circuit Innovation Center, Shanghai 201203, China;
    3 School of Information Science and Technology, Hangzhou Normal University, Hangzhou 311121, China
  • Received:2023-07-31 Revised:2023-10-21 Accepted:2023-11-02 Online:2023-11-14 Published:2023-11-30
  • Contact: Peng Zhou, Zengxing Zhang E-mail:pengzhou@fudan.edu.cn;zhangzx@fudan.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No.62274037), the National Key Research and Development Program of China (Grant No.2018YFA0703703), the Ministry of Science and Technology of China (Grant No.2018YFE0118300), and the State Key Laboratory of ASIC & System (Grant No.2021MS003).

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摘要： In these days, the increasing massive data are being produced and demanded to be processed with the rapid growth of information technology. It is difficult to rely solely on the shrinking of semiconductor devices and scale-up of the integrated circuits (ICs) again in the foreseeable future. Exploring new materials, new-principle semiconductor devices and new computing architectures is becoming an urgent topic in this field. Ambipolar two-dimensional (2D) semiconductors, possessing excellent electrostatic field controllability and flexibly modulated major charge carriers, offer a possibility to construct reconfigurable devices and enable the ICs with new functions, showing great potential in computing capacity, energy efficiency, time delay and cost. This review focuses on the recent significant advancements in reconfigurable electronic and optoelectronic devices of ambipolar 2D semiconductors, and demonstrates their potential approach towards ICs, like reconfigurable circuits and neuromorphic chips. It is expected to help readers understand the device design principle of ambipolar 2D semiconductors, and push forward exploring more new-principle devices and new-architecture computing circuits, and even their product applications.

关键词: two-dimensional material, ambipolar semiconductor, semiconductor device

Abstract: In these days, the increasing massive data are being produced and demanded to be processed with the rapid growth of information technology. It is difficult to rely solely on the shrinking of semiconductor devices and scale-up of the integrated circuits (ICs) again in the foreseeable future. Exploring new materials, new-principle semiconductor devices and new computing architectures is becoming an urgent topic in this field. Ambipolar two-dimensional (2D) semiconductors, possessing excellent electrostatic field controllability and flexibly modulated major charge carriers, offer a possibility to construct reconfigurable devices and enable the ICs with new functions, showing great potential in computing capacity, energy efficiency, time delay and cost. This review focuses on the recent significant advancements in reconfigurable electronic and optoelectronic devices of ambipolar 2D semiconductors, and demonstrates their potential approach towards ICs, like reconfigurable circuits and neuromorphic chips. It is expected to help readers understand the device design principle of ambipolar 2D semiconductors, and push forward exploring more new-principle devices and new-architecture computing circuits, and even their product applications.

Key words: two-dimensional material, ambipolar semiconductor, semiconductor device

中图分类号:  (Photodiodes; phototransistors; photoresistors)

  • 85.60.Dw
73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 85.30.Tv (Field effect devices) 81.16.-c (Methods of micro- and nanofabrication and processing)