中国物理B ›› 2023, Vol. 32 ›› Issue (8): 87305-087305.doi: 10.1088/1674-1056/acd2b6

• • 上一篇    下一篇

Electric modulation of anisotropic magnetoresistance in Pt/HfO2-x/NiOy/Ni heterojunctions

Xiaoyu Ye(叶晓羽)1,2,3, Xiaojian Zhu(朱小健)1,2,3,†, Huali Yang(杨华礼)1,2, Jipeng Duan(段吉鹏)1,2,3, Cui Sun(孙翠)1,2, and Run-Wei Li(李润伟)1,2,3,‡   

  1. 1. CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China;
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China;
    3. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2023-04-10 修回日期:2023-04-29 接受日期:2023-05-05 出版日期:2023-07-14 发布日期:2023-07-14
  • 通讯作者: Xiaojian Zhu, Run-Wei Li E-mail:zhuxj@nimte.ac.cn;runweili@nimte.ac.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China(Grant No.2021YFA1202600), the National Natural Science Foundation of China (Grant Nos.92064011,62174164, 61974179, and 61674153), Youth Innovation Promotion Association of the CAS (Grant No.2020297), Natural Science Foundation of Zhejiang Province(Grant No.LR17E020001), Ningbo Natural Science Foundation (Grant No.202003N4029), and C. Wong Education Foundation (Grant No.GJTD-2020-11).

Electric modulation of anisotropic magnetoresistance in Pt/HfO2-x/NiOy/Ni heterojunctions

Xiaoyu Ye(叶晓羽)1,2,3, Xiaojian Zhu(朱小健)1,2,3,†, Huali Yang(杨华礼)1,2, Jipeng Duan(段吉鹏)1,2,3, Cui Sun(孙翠)1,2, and Run-Wei Li(李润伟)1,2,3,‡   

  1. 1. CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China;
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China;
    3. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2023-04-10 Revised:2023-04-29 Accepted:2023-05-05 Online:2023-07-14 Published:2023-07-14
  • Contact: Xiaojian Zhu, Run-Wei Li E-mail:zhuxj@nimte.ac.cn;runweili@nimte.ac.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China(Grant No.2021YFA1202600), the National Natural Science Foundation of China (Grant Nos.92064011,62174164, 61974179, and 61674153), Youth Innovation Promotion Association of the CAS (Grant No.2020297), Natural Science Foundation of Zhejiang Province(Grant No.LR17E020001), Ningbo Natural Science Foundation (Grant No.202003N4029), and C. Wong Education Foundation (Grant No.GJTD-2020-11).

RichHTML

1

PDF (PC)

281

赞

摘要： Electric field control of magnetism through nanoionics has attracted tremendous attention owing to its high efficiency and low power consumption. In solid-state dielectrics, an electric field drives the redistribution of ions to create one-dimensional magnetic conductive nanostructures, enabling the realization of intriguing magnetoresistance (MR) effects. Here, we explored the electric-controlled nickel and oxygen ion migration in Pt/HfO2-x/NiOy/Ni heterojunctions for MR modulation. By adjusting the voltage polarity and amplitude, the magnetic conductive filaments with mixed nickel and oxygen vacancy are constructed. This results in the reduction of device resistance by ～ 103 folds, and leads to an intriguing partial asymmetric MR effect. We show that the difference of the device resistance under positive and negative saturation magnetic fields exhibits good linear dependence on the magnetic field angle, which can be used for magnetic field direction detection. Our study suggests the potential of electrically controlled ion migration in creating novel magnetic nanostructures for sensor applications.

关键词: nanoionics, resistance random access memory, anisotropic magnetoresistance, angle detection

Abstract: Electric field control of magnetism through nanoionics has attracted tremendous attention owing to its high efficiency and low power consumption. In solid-state dielectrics, an electric field drives the redistribution of ions to create one-dimensional magnetic conductive nanostructures, enabling the realization of intriguing magnetoresistance (MR) effects. Here, we explored the electric-controlled nickel and oxygen ion migration in Pt/HfO2-x/NiOy/Ni heterojunctions for MR modulation. By adjusting the voltage polarity and amplitude, the magnetic conductive filaments with mixed nickel and oxygen vacancy are constructed. This results in the reduction of device resistance by ～ 103 folds, and leads to an intriguing partial asymmetric MR effect. We show that the difference of the device resistance under positive and negative saturation magnetic fields exhibits good linear dependence on the magnetic field angle, which can be used for magnetic field direction detection. Our study suggests the potential of electrically controlled ion migration in creating novel magnetic nanostructures for sensor applications.

Key words: nanoionics, resistance random access memory, anisotropic magnetoresistance, angle detection

中图分类号:  (Metal-insulator-metal structures)

  • 73.40.Rw
75.47.-m (Magnetotransport phenomena; materials for magnetotransport) 81.05.-t (Specific materials: fabrication, treatment, testing, and analysis) 81.15.Jj (Ion and electron beam-assisted deposition; ion plating)