Modulated optical and ferroelectric properties in a lateral structured ferroelectric/semiconductor van der Waals heterojunction

doi:10.1088/1674-1056/acc7fa

中国物理B ›› 2023, Vol. 32 ›› Issue (12): 127301-127301.doi: 10.1088/1674-1056/acc7fa

Modulated optical and ferroelectric properties in a lateral structured ferroelectric/semiconductor van der Waals heterojunction

Shanshan Chen(陈珊珊)¹, Xinhao Zhang(张新昊)¹, Guangcan Wang(王广灿)¹, Shuo Chen(陈朔)¹, Heqi Ma(马和奇)¹, Tianyu Sun(孙天瑜)¹, Baoyuan Man(满宝元)^1,2,‡, and Cheng Yang(杨诚)^1,2,3,†

1 School of Physics and Electronics, Shandong Normal University, Jinan 250014, China;
2 Institute of Materials and Clean Energy, Shandong Normal University, Jinan 250014, China;
3 Shandong Provincial Engineering and Technical Center of Light Manipulations, Shandong Normal University, Jinan 250014, China

收稿日期:2022-12-16 修回日期:2023-03-20 接受日期:2023-03-28 出版日期:2023-11-14 发布日期:2023-11-22
通讯作者: Baoyuan Man, Cheng Yang E-mail:byman@sdnu.edu.cn;chengyang@sdnu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China(Grant Nos.11874244 and 11974222).

Modulated optical and ferroelectric properties in a lateral structured ferroelectric/semiconductor van der Waals heterojunction

1 School of Physics and Electronics, Shandong Normal University, Jinan 250014, China;
2 Institute of Materials and Clean Energy, Shandong Normal University, Jinan 250014, China;
3 Shandong Provincial Engineering and Technical Center of Light Manipulations, Shandong Normal University, Jinan 250014, China

Received:2022-12-16 Revised:2023-03-20 Accepted:2023-03-28 Online:2023-11-14 Published:2023-11-22
Contact: Baoyuan Man, Cheng Yang E-mail:byman@sdnu.edu.cn;chengyang@sdnu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China(Grant Nos.11874244 and 11974222).

1. 附件.pdf(758KB)

摘要/Abstract

摘要： Modulation between optical and ferroelectric properties was realized in a lateral structured ferroelectric CuInP₂S₆ (CIPS)/semiconductor MoS₂ van der Waals heterojunction. The ferroelectric hysteresis loop area was modulated by the optical field. Two types of photodetection properties can be realized in a device by changing the ON and OFF states of the ferroelectric layer. The device was used as a photodetector in the OFF state but not in the ON state. The higher tunnelling electroresistance (~1.4×10⁴) in a lateral structured ferroelectric tunnelling junction was crucial, and it was analyzed and modulated by the barrier height and width of the ferroelectric CIPS/semiconductor MoS₂ Schottky junction. The new parameter of the ferroelectric hysteresis loop area as a function of light intensity was introduced to analyze the relationship between the ferroelectric and photodetection properties. The proposed device has potential application as an optoelectronic sensory cell in the biological nervous system or as a new type of photodetector.

关键词: ferroelectric tunnelling junction, metal/ferroelectric/semiconductor, tunnelling electroresistance, optoelectronic properties

Abstract: Modulation between optical and ferroelectric properties was realized in a lateral structured ferroelectric CuInP₂S₆ (CIPS)/semiconductor MoS₂ van der Waals heterojunction. The ferroelectric hysteresis loop area was modulated by the optical field. Two types of photodetection properties can be realized in a device by changing the ON and OFF states of the ferroelectric layer. The device was used as a photodetector in the OFF state but not in the ON state. The higher tunnelling electroresistance (~1.4×10⁴) in a lateral structured ferroelectric tunnelling junction was crucial, and it was analyzed and modulated by the barrier height and width of the ferroelectric CIPS/semiconductor MoS₂ Schottky junction. The new parameter of the ferroelectric hysteresis loop area as a function of light intensity was introduced to analyze the relationship between the ferroelectric and photodetection properties. The proposed device has potential application as an optoelectronic sensory cell in the biological nervous system or as a new type of photodetector.

Key words: ferroelectric tunnelling junction, metal/ferroelectric/semiconductor, tunnelling electroresistance, optoelectronic properties

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

73.43.Jn (Tunneling) 85.50.Gk (Non-volatile ferroelectric memories) 85.60.-q (Optoelectronic devices)

Shanshan Chen(陈珊珊), Xinhao Zhang(张新昊), Guangcan Wang(王广灿), Shuo Chen(陈朔), Heqi Ma(马和奇), Tianyu Sun(孙天瑜), Baoyuan Man(满宝元), and Cheng Yang(杨诚). Modulated optical and ferroelectric properties in a lateral structured ferroelectric/semiconductor van der Waals heterojunction[J]. 中国物理B, 2023, 32(12): 127301-127301.

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Modulated optical and ferroelectric properties in a lateral structured ferroelectric/semiconductor van der Waals heterojunction

Modulated optical and ferroelectric properties in a lateral structured ferroelectric/semiconductor van der Waals heterojunction

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