Investigation of heavy ion irradiation effects on a charge trapping memory capacitor by bm C-V measurement

doi:10.1088/1674-1056/acae78

中国物理B ›› 2023, Vol. 32 ›› Issue (9): 96102-096102.doi: 10.1088/1674-1056/acae78

Investigation of heavy ion irradiation effects on a charge trapping memory capacitor by bm C-V measurement

Qiyu Chen(陈麒宇)^1,2, Xirong Yang(杨西荣)^1,2, Zongzhen Li(李宗臻)^1,†, Jinshun Bi(毕津顺)³, Kai Xi(习凯)³, Zhenxing Zhang(张振兴)⁴, Pengfei Zhai(翟鹏飞)^1,2, Youmei Sun(孙友梅)^1,2, and Jie Liu(刘杰)^1,2,‡

1 Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000, China;
2 School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
4 Lanzhou University, Lanzhou 730000, China

收稿日期:2022-09-05 修回日期:2022-12-21 接受日期:2022-12-27 发布日期:2023-08-23
通讯作者: Zongzhen Li, Jie Liu E-mail:lizz@impcas.ac.cn;j.liu@impcas.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 12105340, 12035019, and 12075290) and the Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2020412). We would like to thank all the accelerator staff at the HIRFL accelerator.

Investigation of heavy ion irradiation effects on a charge trapping memory capacitor by bm C-V measurement

1 Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000, China;
2 School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
4 Lanzhou University, Lanzhou 730000, China

Received:2022-09-05 Revised:2022-12-21 Accepted:2022-12-27 Published:2023-08-23
Contact: Zongzhen Li, Jie Liu E-mail:lizz@impcas.ac.cn;j.liu@impcas.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 12105340, 12035019, and 12075290) and the Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2020412). We would like to thank all the accelerator staff at the HIRFL accelerator.

摘要/Abstract

摘要： Heavy ion irradiation effects on charge trapping memory (CTM) capacitors with TiN/Al₂O₃/HfO₂/Al₂O₃/HfO₂/ SiO₂/p-Si structure have been investigated. The ion-induced interface charges and oxide trap charges were calculated and analyzed by capacitance-voltage (C-V) characteristics. The C-V curves shift towards the negative direction after swift heavy ion irradiation, due to the net positive charges accumulating in the trapping layer. The memory window decreases with the increase of ion fluence at high voltage, which results from heavy ion-induced structural damage in the blocking layer. The mechanism of heavy ion irradiation effects on CTM capacitors is discussed in detail with energy band diagrams. The results may help to better understand the physical mechanism of heavy ion-induced degradation of CTM capacitors.

关键词: charge trapping memory (CTM), high-k dielectric stack, heavy ion irradiation, reliability

Abstract: Heavy ion irradiation effects on charge trapping memory (CTM) capacitors with TiN/Al₂O₃/HfO₂/Al₂O₃/HfO₂/ SiO₂/p-Si structure have been investigated. The ion-induced interface charges and oxide trap charges were calculated and analyzed by capacitance-voltage (C-V) characteristics. The C-V curves shift towards the negative direction after swift heavy ion irradiation, due to the net positive charges accumulating in the trapping layer. The memory window decreases with the increase of ion fluence at high voltage, which results from heavy ion-induced structural damage in the blocking layer. The mechanism of heavy ion irradiation effects on CTM capacitors is discussed in detail with energy band diagrams. The results may help to better understand the physical mechanism of heavy ion-induced degradation of CTM capacitors.

Key words: charge trapping memory (CTM), high-k dielectric stack, heavy ion irradiation, reliability

中图分类号: (Semiconductors)

61.82.Fk

61.80.Jh (Ion radiation effects) 42.88.+h (Environmental and radiation effects on optical elements, devices, and systems)

Qiyu Chen(陈麒宇), Xirong Yang(杨西荣), Zongzhen Li(李宗臻), Jinshun Bi(毕津顺), Kai Xi(习凯),Zhenxing Zhang(张振兴), Pengfei Zhai(翟鹏飞), Youmei Sun(孙友梅), and Jie Liu(刘杰). Investigation of heavy ion irradiation effects on a charge trapping memory capacitor by bm C-V measurement[J]. 中国物理B, 2023, 32(9): 96102-096102.

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Investigation of heavy ion irradiation effects on a charge trapping memory capacitor by bm C-V measurement

Investigation of heavy ion irradiation effects on a charge trapping memory capacitor by bm C-V measurement

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