关键词: two-dimensional ferroelectric materials, scanning tunneling microscope, lateral heterostructure, band alignment

Abstract: Recent findings of two-dimensional (2D) ferroelectric (FE) materials provide more possibilities for the development of 2D FE heterostructure electronic devices based on van der Waals materials and the application of FE devices under the limit of atomic layer thickness. In this paper, we report the in-situ fabrication and probing of electronic structures of In$_{2}$Se$_{3}$-WSe$_{2}$ lateral heterostructures, compared with most vertical FE heterostructures at present. Through molecular beam epitaxy, we fabricated lateral heterostructures with monolayer WSe$_{2}$ (three atomic layers) and monolayer In$_{2}$Se$_{3}$ (five atomic layers). Type-II band alignment was found to exist in either the lateral heterostructure composed of anti-FE $\beta '$-In$_{2}$Se$_{3}$ and WSe$_{2}$ or the lateral heterostructure composed of FE $\beta^*$-In$_{2}$Se$_{3}$ and WSe$_{2}$, and the band offsets could be modulated by ferroelectric polarization. More interestingly, interface states in both lateral heterostructures acted as narrow gap quantum wires, and the band gap of the interface state in the $\beta^*$-In$_{2}$Se$_{3}$-WSe$_{2}$ heterostructure was smaller than that in the $\beta '$-In$_{2}$Se$_{3}$ heterostructure. The fabrication of 2D FE heterostructure and the modulation of interface state provide a new platform for the development of FE devices.

Key words: two-dimensional ferroelectric materials, scanning tunneling microscope, lateral heterostructure, band alignment