中国物理B ›› 2023, Vol. 32 ›› Issue (10): 107310-107310.doi: 10.1088/1674-1056/acd5c0

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Design and investigation of doping-less gate-all-around TFET with Mg2Si source material for low power and enhanced performance applications

Pranav Agarwal, Sankalp Rai, Rakshit Y. A, and Varun Mishra   

  1. Graphic Era(deemed to be university), Dehradun, Uttarakhand, India
  • 收稿日期:2023-01-10 修回日期:2023-04-30 接受日期:2023-05-16 出版日期:2023-09-21 发布日期:2023-09-21
  • 通讯作者: Varun Mishra E-mail:varun20mishra@gmail.com

Design and investigation of doping-less gate-all-around TFET with Mg2Si source material for low power and enhanced performance applications

Pranav Agarwal, Sankalp Rai, Rakshit Y. A, and Varun Mishra   

  1. Graphic Era(deemed to be university), Dehradun, Uttarakhand, India
  • Received:2023-01-10 Revised:2023-04-30 Accepted:2023-05-16 Online:2023-09-21 Published:2023-09-21
  • Contact: Varun Mishra E-mail:varun20mishra@gmail.com

摘要: Metal-oxide-semiconductor field-effect transistor (MOSFET) faces the major problem of being unable to achieve a subthreshold swing (SS) below 60 mV/dec. As device dimensions continue to reduce and the demand for high switching ratios for low power consumption increases, the tunnel field-effect transistor (TFET) appears to be a viable device, displaying promising characteristic as an answer to the shortcomings of the traditional MOSFET. So far, TFET designing has been a task of sacrificing higher ON state current for low subthreshold swing (and $vice versa$), and a device that displays both while maintaining structural integrity and operational stability lies in the nascent stages of popular research. This work presents a comprehensive analysis of a heterojunction plasma doped gate-all-around TFET (HPD-GAA-TFET) by making a comparison between Mg$_{2}$Si and Si which serve as source materials. Charge plasma technique is employed to implement doping in an intrinsic silicon wafer with the help of suitable electrodes. A low-energy bandgap material, i.e. magnesium silicide is incorporated as source material to form a heterojunction between source and silicon-based channel. A rigorous comparison of performance between Si-based GAA-TFET and HPD-GAA-TFET is conducted in terms of electrical, radio frequency (RF), linearity, and distortion parameters. It is observable that HPD-GAA-TFET outperforms conventional Si-based GAA-TFET with an ON-state current ($I_{\rm ON}$), subthreshold swing (SS), threshold voltage ($V_{\rm th}$), and current switching ratio being 0.377 mA, 12.660 mV/dec, 0.214 V, and $2.985\times 10^{12}$, respectively. Moreover, HPD-GAA-TFET holds faster switching and is more reliable than Si-based device. Therefore, HPD-GAA-TFET is suitable for low-power applications.

关键词: subthreshold, Mg2Si, heterojunction, charge plasma, gate-all-around (GAA)

Abstract: Metal-oxide-semiconductor field-effect transistor (MOSFET) faces the major problem of being unable to achieve a subthreshold swing (SS) below 60 mV/dec. As device dimensions continue to reduce and the demand for high switching ratios for low power consumption increases, the tunnel field-effect transistor (TFET) appears to be a viable device, displaying promising characteristic as an answer to the shortcomings of the traditional MOSFET. So far, TFET designing has been a task of sacrificing higher ON state current for low subthreshold swing (and $vice versa$), and a device that displays both while maintaining structural integrity and operational stability lies in the nascent stages of popular research. This work presents a comprehensive analysis of a heterojunction plasma doped gate-all-around TFET (HPD-GAA-TFET) by making a comparison between Mg$_{2}$Si and Si which serve as source materials. Charge plasma technique is employed to implement doping in an intrinsic silicon wafer with the help of suitable electrodes. A low-energy bandgap material, i.e. magnesium silicide is incorporated as source material to form a heterojunction between source and silicon-based channel. A rigorous comparison of performance between Si-based GAA-TFET and HPD-GAA-TFET is conducted in terms of electrical, radio frequency (RF), linearity, and distortion parameters. It is observable that HPD-GAA-TFET outperforms conventional Si-based GAA-TFET with an ON-state current ($I_{\rm ON}$), subthreshold swing (SS), threshold voltage ($V_{\rm th}$), and current switching ratio being 0.377 mA, 12.660 mV/dec, 0.214 V, and $2.985\times 10^{12}$, respectively. Moreover, HPD-GAA-TFET holds faster switching and is more reliable than Si-based device. Therefore, HPD-GAA-TFET is suitable for low-power applications.

Key words: subthreshold, Mg2Si, heterojunction, charge plasma, gate-all-around (GAA)

中图分类号:  (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Lq