A self-powered ultraviolet photodetector based on a Ga2O3/Bi2WO6 heterojunction with low noise and stable photoresponse

doi:10.1088/1674-1056/ac7865

中国物理B ›› 2023, Vol. 32 ›› Issue (4): 47301-047301.doi: 10.1088/1674-1056/ac7865

A self-powered ultraviolet photodetector based on a Ga₂O₃/Bi₂WO₆ heterojunction with low noise and stable photoresponse

Li-Li Yang(杨莉莉)^1,2, Yu-Si Peng(彭宇思)³, Zeng Liu(刘增)^1,2, Mao-Lin Zhang(张茂林)^1,2, Yu-Feng Guo(郭宇锋)^1,2, Yong Yang(杨勇)³, and Wei-Hua Tang(唐为华)^1,2,†

1 College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
2 National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
3 State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

收稿日期:2022-03-31 修回日期:2022-06-10 接受日期:2022-06-14 出版日期:2023-03-10 发布日期:2023-04-10
通讯作者: Wei-Hua Tang E-mail:whtang@njupt.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB3605404), Natural Science Research Start up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (Grant Nos. XK1060921119, XK1060921115, and XK1060921002), National Natural Science Foundation of China (Grant No. 62204125), and China Postdoctoral Science Foundation (Grant No. 2022M721689).

A self-powered ultraviolet photodetector based on a Ga₂O₃/Bi₂WO₆ heterojunction with low noise and stable photoresponse

Li-Li Yang(杨莉莉)^1,2, Yu-Si Peng(彭宇思)³, Zeng Liu(刘增)^1,2, Mao-Lin Zhang(张茂林)^1,2, Yu-Feng Guo(郭宇锋)^1,2, Yong Yang(杨勇)³, and Wei-Hua Tang(唐为华)^1,2,†

1 College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
2 National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
3 State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

Received:2022-03-31 Revised:2022-06-10 Accepted:2022-06-14 Online:2023-03-10 Published:2023-04-10
Contact: Wei-Hua Tang E-mail:whtang@njupt.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB3605404), Natural Science Research Start up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (Grant Nos. XK1060921119, XK1060921115, and XK1060921002), National Natural Science Foundation of China (Grant No. 62204125), and China Postdoctoral Science Foundation (Grant No. 2022M721689).

摘要/Abstract

摘要： A self-powered solar-blind ultraviolet (UV) photodetector (PD) was successfully constructed on a Ga$_{2}$O$_{3}$/Bi$_{2}$WO$_{6}$ heterojunction, which was fabricated by spin-coating the hydrothermally grown Bi$_{2}$WO$_{6}$ onto MOCVD-grown Ga$_{2}$O$_{3}$ film. The results show that a typical type-I heterojunction is formed at the interface of the Ga$_{2}$O$_{3}$ film and clustered Bi$_{2}$WO$_{6}$, which demonstrates a distinct photovoltaic effect with an open-circuit voltage of 0.18 V under the irradiation of 254 nm UV light. Moreover, the Ga$_{2}$O$_{3}$/Bi$_{2}$WO$_{6}$ PD displays excellent photodetection performance with an ultra-low dark current of $\sim 6 $ fA, and a high light-to-dark current ratio (PDCR) of $3.5\times 10^{4}$ in self-powered mode (0 V), as well as a best responsivity result of 2.21 mA/W in power supply mode (5 V). Furthermore, the PD possesses a stable and fast response speed under different light intensities and voltages. At zero voltage, the PD exhibits a fast rise time of 132 ms and 162 ms, as well as a quick decay time of 69 ms and 522 ms, respectively. In general, the newly attempted Ga$_{2}$O$_{3}$/Bi$_{2}$WO$_{6}$ heterojunction may become a potential candidate for the realization of self-powered and high-performance UV photodetectors.

关键词: Ga₂O₃/Bi₂WO₆ heterojunction, UV photodetector, self-powered operation

Abstract: A self-powered solar-blind ultraviolet (UV) photodetector (PD) was successfully constructed on a Ga$_{2}$O$_{3}$/Bi$_{2}$WO$_{6}$ heterojunction, which was fabricated by spin-coating the hydrothermally grown Bi$_{2}$WO$_{6}$ onto MOCVD-grown Ga$_{2}$O$_{3}$ film. The results show that a typical type-I heterojunction is formed at the interface of the Ga$_{2}$O$_{3}$ film and clustered Bi$_{2}$WO$_{6}$, which demonstrates a distinct photovoltaic effect with an open-circuit voltage of 0.18 V under the irradiation of 254 nm UV light. Moreover, the Ga$_{2}$O$_{3}$/Bi$_{2}$WO$_{6}$ PD displays excellent photodetection performance with an ultra-low dark current of $\sim 6 $ fA, and a high light-to-dark current ratio (PDCR) of $3.5\times 10^{4}$ in self-powered mode (0 V), as well as a best responsivity result of 2.21 mA/W in power supply mode (5 V). Furthermore, the PD possesses a stable and fast response speed under different light intensities and voltages. At zero voltage, the PD exhibits a fast rise time of 132 ms and 162 ms, as well as a quick decay time of 69 ms and 522 ms, respectively. In general, the newly attempted Ga$_{2}$O$_{3}$/Bi$_{2}$WO$_{6}$ heterojunction may become a potential candidate for the realization of self-powered and high-performance UV photodetectors.

Key words: Ga₂O₃/Bi₂WO₆ heterojunction, UV photodetector, self-powered operation

中图分类号: (Electronic transport in interface structures)

73.40.-c

73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.50.Pz (Photoconduction and photovoltaic effects)

Li-Li Yang(杨莉莉), Yu-Si Peng(彭宇思), Zeng Liu(刘增), Mao-Lin Zhang(张茂林),Yu-Feng Guo(郭宇锋), Yong Yang(杨勇), and Wei-Hua Tang(唐为华). A self-powered ultraviolet photodetector based on a Ga₂O₃/Bi₂WO₆ heterojunction with low noise and stable photoresponse[J]. 中国物理B, 2023, 32(4): 47301-047301.

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A self-powered ultraviolet photodetector based on a Ga₂O₃/Bi₂WO₆ heterojunction with low noise and stable photoresponse

A self-powered ultraviolet photodetector based on a Ga₂O₃/Bi₂WO₆ heterojunction with low noise and stable photoresponse

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