Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

doi:10.1088/1674-1056/ac8f3b

中国物理B ›› 2023, Vol. 32 ›› Issue (6): 66105-066105.doi: 10.1088/1674-1056/ac8f3b

Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

Ya-Hui Feng(冯亚辉)¹, Hong-Xia Guo(郭红霞)^1,2,†, Xiao-Yu Pan(潘霄宇)², Jin-Xin Zhang(张晋新)³, Xiang-Li Zhong(钟向丽)¹, Hong Zhang(张鸿)¹, An-An Ju(琚安安)¹, Ye Liu(刘晔)¹, and Xiao-Ping Ouyang(欧阳晓平)^1,2

1 School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China;
2 State Key Laboratory of Experimental Simulation and Effects of Strong Pulse Radiation, Northwest Institute of Nuclear Technology, Xi'an 710024, China;
3 School of Space Science and Technology, Xidian University, Xi'an 710071, China

收稿日期:2022-07-15 修回日期:2022-08-29 接受日期:2022-09-05 出版日期:2023-05-17 发布日期:2023-06-12
通讯作者: Hong-Xia Guo E-mail:guohxnint@126.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61574171, 61704127, 11875229, 51872251, and 12027813).

Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

1 School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China;
2 State Key Laboratory of Experimental Simulation and Effects of Strong Pulse Radiation, Northwest Institute of Nuclear Technology, Xi'an 710024, China;
3 School of Space Science and Technology, Xidian University, Xi'an 710071, China

Received:2022-07-15 Revised:2022-08-29 Accepted:2022-09-05 Online:2023-05-17 Published:2023-06-12
Contact: Hong-Xia Guo E-mail:guohxnint@126.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61574171, 61704127, 11875229, 51872251, and 12027813).

摘要/Abstract

摘要： The single event effect of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned with a pulsed laser. With variation of the collector bias and pulsed laser incident energy, the single event transient of the SiGe HBT was studied. Moreover, the single event transient produced by laser irradiation at a wavelength of 532 nm was more pronounced than at a wavelength of 1064 nm. Finally, the impact of the equivalent linear energy transfer of the 1064 nm pulsed laser on the single event transient was qualitatively examined by performing technology computer-aided design simulations, and a good consistency between the experimental data and the simulated outcomes was attained.

关键词: silicon-germanium, heterojunction bipolar transistor, pulsed laser, single event effect, equivalent linear energy transfer (LET) value

Abstract: The single event effect of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned with a pulsed laser. With variation of the collector bias and pulsed laser incident energy, the single event transient of the SiGe HBT was studied. Moreover, the single event transient produced by laser irradiation at a wavelength of 532 nm was more pronounced than at a wavelength of 1064 nm. Finally, the impact of the equivalent linear energy transfer of the 1064 nm pulsed laser on the single event transient was qualitatively examined by performing technology computer-aided design simulations, and a good consistency between the experimental data and the simulated outcomes was attained.

Key words: silicon-germanium, heterojunction bipolar transistor, pulsed laser, single event effect, equivalent linear energy transfer (LET) value

中图分类号: (Ge and Si)

61.72.uf

61.80.-x (Physical radiation effects, radiation damage) 61.80.Jh (Ion radiation effects) 61.82.Fk (Semiconductors)

Ya-Hui Feng(冯亚辉), Hong-Xia Guo(郭红霞), Xiao-Yu Pan(潘霄宇), Jin-Xin Zhang(张晋新),Xiang-Li Zhong(钟向丽), Hong Zhang(张鸿), An-An Ju(琚安安),Ye Liu(刘晔), and Xiao-Ping Ouyang(欧阳晓平). Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation[J]. 中国物理B, 2023, 32(6): 66105-066105.

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Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

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