中国物理B ›› 2023, Vol. 32 ›› Issue (5): 58504-058504.doi: 10.1088/1674-1056/acbd2d
A SiC asymmetric cell trench MOSFET with a split gate and integrated p+-poly Si/SiC heterojunction freewheeling diode
Kaizhe Jiang(蒋铠哲)1, Xiaodong Zhang(张孝冬)1,†, Chuan Tian(田川)2, Shengrong Zhang(张升荣)3, Liqiang Zheng(郑理强)1, Rongzhao He(赫荣钊)1, and Chong Shen(沈重)1,‡
- 1 State Key Laboratory of Marine Resource Utilization in South China Sea, Hainan University, Haikou 570228, China;
2 Institute of Deep-Sea Science and Engineering, Chinese Academy of Sciences, Sanya 572000, China;
3 Sansha Guohaixintong Technology Development Co., Ltd, Haikou 570100, China
A SiC asymmetric cell trench MOSFET with a split gate and integrated p+-poly Si/SiC heterojunction freewheeling diode
Kaizhe Jiang(蒋铠哲)1, Xiaodong Zhang(张孝冬)1,†, Chuan Tian(田川)2, Shengrong Zhang(张升荣)3, Liqiang Zheng(郑理强)1, Rongzhao He(赫荣钊)1, and Chong Shen(沈重)1,‡
- 1 State Key Laboratory of Marine Resource Utilization in South China Sea, Hainan University, Haikou 570228, China;
2 Institute of Deep-Sea Science and Engineering, Chinese Academy of Sciences, Sanya 572000, China;
3 Sansha Guohaixintong Technology Development Co., Ltd, Haikou 570100, China
摘要： A new SiC asymmetric cell trench metal--oxide--semiconductor field effect transistor (MOSFET) with a split gate (SG) and integrated p$^{+}$-poly Si/SiC heterojunction freewheeling diode (SGHJD-TMOS) is investigated in this article. The SG structure of the SGHJD-TMOS structure can effectively reduce the gate-drain capacitance and reduce the high gate-oxide electric field. The integrated p$^{+}$-poly Si/SiC heterojunction freewheeling diode substantially improves body diode characteristics and reduces switching losses without degrading the static characteristics of the device. Numerical analysis results show that, compared with the conventional asymmetric cell trench MOSFET (CA-TMOS), the high-frequency figure of merit (HF-FOM, $R_{\rm on,sp}\times Q_{\rm gd,sp}$) is reduced by 92.5%, and the gate-oxide electric field is reduced by 75%. In addition, the forward conduction voltage drop ($V_{\rm F}$) and gate-drain charge ($Q_{\rm gd}$) are reduced from 2.90 V and 63.5 μC/cm$^{2}$ in the CA-TMOS to 1.80 V and 26.1 μC/cm$^{2}$ in the SGHJD-TMOS, respectively. Compared with the CA-TMOS, the turn-on loss ($E_{\rm on}$) and turn-off loss ($E_{\rm off}$) of the SGHJD-TMOS are reduced by 21.1% and 12.2%, respectively.
中图分类号: (Semiconductor devices)
- 85.30.-z