A fast-response self-powered UV-Vis-NIR broadband photodetector based on a AgIn5Se8/t-Se heterojunction

doi:10.1088/1674-1056/acec44

中国物理B ›› 2023, Vol. 32 ›› Issue (11): 118503-118503.doi: 10.1088/1674-1056/acec44

所属专题： SPECIAL TOPIC — Celebrating the 100th Anniversary of Physics Discipline of Northwest University

A fast-response self-powered UV-Vis-NIR broadband photodetector based on a AgIn₅Se₈/t-Se heterojunction

Kang Li(李康), Lei Xu(许磊), Qidong Lu(陆启东), and Peng Hu(胡鹏)^†

School of Physics, Northwest University, Xi'an 710127, China

收稿日期:2023-06-14 修回日期:2023-07-25 接受日期:2023-08-01 出版日期:2023-10-16 发布日期:2023-10-31
通讯作者: Peng Hu E-mail:hupeng@nwu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 51803168), the Key Research and Development Program of Shaanxi Province (Grant No. 2022GY-356), and the Youth Innovation Team of Shaanxi Universities.

A fast-response self-powered UV-Vis-NIR broadband photodetector based on a AgIn₅Se₈/t-Se heterojunction

Kang Li(李康), Lei Xu(许磊), Qidong Lu(陆启东), and Peng Hu(胡鹏)^†

School of Physics, Northwest University, Xi'an 710127, China

Received:2023-06-14 Revised:2023-07-25 Accepted:2023-08-01 Online:2023-10-16 Published:2023-10-31
Contact: Peng Hu E-mail:hupeng@nwu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 51803168), the Key Research and Development Program of Shaanxi Province (Grant No. 2022GY-356), and the Youth Innovation Team of Shaanxi Universities.

1. 2023-118503-SI.pdf.pdf(1255KB)

摘要/Abstract

摘要： A type II p-n heterojunction could improve the photodetection performance of a photodetector due to the excellent ability of carrier separation. N-type AgIn₅Se₈ (AIS) exhibits a large optical absorption coefficient, high optical conductivity and a suitable bandgap, and shows potential application in broadband photodetection. Even though our previous study on AgIn₅Se₈/FePSe₃ obtained a good response speed, it still gave low responsivity due to the poor quality of the p-type FePSe₃ thin film. Se, with a direct bandgap (around 1.7 eV), p-type conductivity, high electron mobility and high carrier density, is likely to form a low-dimensional structure, which leads to an increase in the effective contact area of the heterojunction and further improves the photodetector performance. In this work, continuous and dense t-Se thin film was prepared by electrochemical deposition. The self-powered AgIn₅Se₈/t-Se heterojunction photodetector exhibited a broadband detection range from 365 nm to 1200 nm. The responsivity and detectivity of the heterojunction photodetector were 32 μ A/W and 1.8× 10⁹ Jones, respectively, which are around 9 and 4 times higher than those of the AgIn₅Se₈/FePSe₃ heterojunction photodetector. The main reason for this is the good quality of the t-Se thin film and the formation of the low-dimensional t-Se nanoribbons, which optimized the transport pathway of carriers. The results indicate that the AgIn₅Se₈/t-Se heterojunction is an excellent candidate for broadband and self-powered photoelectronic devices.

关键词: AgIn₅Se₈/t-Se heterojunction, self-power broadband photodetector

Abstract: A type II p-n heterojunction could improve the photodetection performance of a photodetector due to the excellent ability of carrier separation. N-type AgIn₅Se₈ (AIS) exhibits a large optical absorption coefficient, high optical conductivity and a suitable bandgap, and shows potential application in broadband photodetection. Even though our previous study on AgIn₅Se₈/FePSe₃ obtained a good response speed, it still gave low responsivity due to the poor quality of the p-type FePSe₃ thin film. Se, with a direct bandgap (around 1.7 eV), p-type conductivity, high electron mobility and high carrier density, is likely to form a low-dimensional structure, which leads to an increase in the effective contact area of the heterojunction and further improves the photodetector performance. In this work, continuous and dense t-Se thin film was prepared by electrochemical deposition. The self-powered AgIn₅Se₈/t-Se heterojunction photodetector exhibited a broadband detection range from 365 nm to 1200 nm. The responsivity and detectivity of the heterojunction photodetector were 32 μ A/W and 1.8× 10⁹ Jones, respectively, which are around 9 and 4 times higher than those of the AgIn₅Se₈/FePSe₃ heterojunction photodetector. The main reason for this is the good quality of the t-Se thin film and the formation of the low-dimensional t-Se nanoribbons, which optimized the transport pathway of carriers. The results indicate that the AgIn₅Se₈/t-Se heterojunction is an excellent candidate for broadband and self-powered photoelectronic devices.

Key words: AgIn₅Se₈/t-Se heterojunction, self-power broadband photodetector

中图分类号: (Semiconductor devices)

85.30.-z

85.60.Gz (Photodetectors (including infrared and CCD detectors)) 73.61.Le (Other inorganic semiconductors)

Kang Li(李康), Lei Xu(许磊), Qidong Lu(陆启东), and Peng Hu(胡鹏). A fast-response self-powered UV-Vis-NIR broadband photodetector based on a AgIn₅Se₈/t-Se heterojunction[J]. 中国物理B, 2023, 32(11): 118503-118503.

Kang Li(李康), Lei Xu(许磊), Qidong Lu(陆启东), and Peng Hu(胡鹏). A fast-response self-powered UV-Vis-NIR broadband photodetector based on a AgIn₅Se₈/t-Se heterojunction[J]. Chin. Phys. B, 2023, 32(11): 118503-118503.

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A fast-response self-powered UV-Vis-NIR broadband photodetector based on a AgIn₅Se₈/t-Se heterojunction

A fast-response self-powered UV-Vis-NIR broadband photodetector based on a AgIn₅Se₈/t-Se heterojunction

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