An accurate analytical surface potential model of heterojunction tunnel FET

doi:10.1088/1674-1056/accd48

中国物理B ›› 2023, Vol. 32 ›› Issue (10): 108506-108506.doi: 10.1088/1674-1056/accd48

An accurate analytical surface potential model of heterojunction tunnel FET

Yunhe Guan(关云鹤)^†, Huan Li(黎欢), Haifeng Chen(陈海峰), and Siwei Huang(黄思伟)

School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China

收稿日期:2022-12-27 修回日期:2023-04-13 接受日期:2023-04-16 出版日期:2023-09-21 发布日期:2023-10-09
通讯作者: Yunhe Guan E-mail:gyhflc@xupt.edu.cn
基金资助:
Project supported in part by the National Natural Science Foundation of China (Grant No. 62104192) and in part by the Natural Science Basic Research Program of Shaanxi Province (Grant No. 2021JQ-717).

An accurate analytical surface potential model of heterojunction tunnel FET

Yunhe Guan(关云鹤)^†, Huan Li(黎欢), Haifeng Chen(陈海峰), and Siwei Huang(黄思伟)

School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China

Received:2022-12-27 Revised:2023-04-13 Accepted:2023-04-16 Online:2023-09-21 Published:2023-10-09
Contact: Yunhe Guan E-mail:gyhflc@xupt.edu.cn
Supported by:
Project supported in part by the National Natural Science Foundation of China (Grant No. 62104192) and in part by the Natural Science Basic Research Program of Shaanxi Province (Grant No. 2021JQ-717).

摘要/Abstract

摘要： Based on the accurate and efficient thermal injection method, we develop a fully analytical surface potential model for the heterojunction tunnel field-effect transistor (H-TFET). This model accounts for both the effects of source depletion and inversion charge, which are the key factors influencing the charge, capacitance and current in H-TFET. The accuracy of the model is validated against TCAD simulation and is greatly improved in comparison with the conventional model based on Maxwell-Boltzmann approximation. Furthermore, the dependences of the surface potential and electric field on biases are well predicted and thoroughly analyzed.

关键词: surface potential model, thermal injection method, tunnel field-effect transistor, heterojunction

Abstract: Based on the accurate and efficient thermal injection method, we develop a fully analytical surface potential model for the heterojunction tunnel field-effect transistor (H-TFET). This model accounts for both the effects of source depletion and inversion charge, which are the key factors influencing the charge, capacitance and current in H-TFET. The accuracy of the model is validated against TCAD simulation and is greatly improved in comparison with the conventional model based on Maxwell-Boltzmann approximation. Furthermore, the dependences of the surface potential and electric field on biases are well predicted and thoroughly analyzed.

Key words: surface potential model, thermal injection method, tunnel field-effect transistor, heterojunction

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices)) 85.30.Tv (Field effect devices)

Yunhe Guan(关云鹤), Huan Li(黎欢), Haifeng Chen(陈海峰), and Siwei Huang(黄思伟). An accurate analytical surface potential model of heterojunction tunnel FET[J]. 中国物理B, 2023, 32(10): 108506-108506.

Yunhe Guan(关云鹤), Huan Li(黎欢), Haifeng Chen(陈海峰), and Siwei Huang(黄思伟). An accurate analytical surface potential model of heterojunction tunnel FET[J]. Chin. Phys. B, 2023, 32(10): 108506-108506.

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An accurate analytical surface potential model of heterojunction tunnel FET

An accurate analytical surface potential model of heterojunction tunnel FET

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