中国物理B ›› 2023, Vol. 32 ›› Issue (9): 98502-098502.doi: 10.1088/1674-1056/aca4be
NiO/β-Ga2O3 heterojunction diodes with ultra-low leakage current below 10-10 A and high thermostability
Yi Huang(黄义)1, Wen Yang(杨稳)1, Qi Wang(王琦)1,†, Sheng Gao(高升)1, Wei-Zhong Chen(陈伟中)1, Xiao-Sheng Tang(唐孝生)1, Hong-Sheng Zhang(张红升)1, and Bin Liu(刘斌)2
- 1 School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China;
2 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
NiO/β-Ga2O3 heterojunction diodes with ultra-low leakage current below 10-10 A and high thermostability
Yi Huang(黄义)1, Wen Yang(杨稳)1, Qi Wang(王琦)1,†, Sheng Gao(高升)1, Wei-Zhong Chen(陈伟中)1, Xiao-Sheng Tang(唐孝生)1, Hong-Sheng Zhang(张红升)1, and Bin Liu(刘斌)2
- 1 School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China;
2 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
摘要： The 10 nm p-NiO thin film is prepared by thermal oxidation of Ni on β-Ga2O3 to form NiO/β-Ga2O3 p-n heterojunction diodes (HJDs). The NiO/β-Ga2O3 HJDs exhibit excellent electrostatic properties, with a high breakdown voltage of 465 V, a specific on-resistance (Ron,sp) of 3.39 mΩ ·cm2, and a turn-on voltage (Von) of 1.85 V, yielding a static Baliga's figure of merit (FOM) of 256 MW/cm2. Also, the HJDs have a low turn-on voltage, which reduces conduction loss dramatically, and a rectification ratio of up to 108. Meanwhile, the HJDs' reverse leakage current is essentially unaffected at temperatures below 170 ℃, and their leakage level may be controlled below 10-10 A. This indicates that p-NiO/β-Ga2O3 HJDs with good thermal stability and high-temperature operating ability can be a good option for high-performance β-Ga2O3 power devices.
中图分类号: (Junction diodes)
- 85.30.Kk