中国物理B ›› 2023, Vol. 32 ›› Issue (2): 27504-027504.doi: 10.1088/1674-1056/ac9a3b

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Charge-mediated voltage modulation of magnetism in Hf0.5Zr0.5O2/Co multiferroic heterojunction

Jia Chen(陈佳)1,2, Peiyue Yu(于沛玥)1,2, Lei Zhao(赵磊)1,2, Yanru Li(李彦如)1,2, Meiyin Yang(杨美音)1, Jing Xu(许静)1,2, Jianfeng Gao(高建峰)1, Weibing Liu(刘卫兵)1, Junfeng Li(李俊峰)1, Wenwu Wang(王文武)1,2, Jin Kang(康劲)3, Weihai Bu(卜伟海)3, Kai Zheng(郑凯)3, Bingjun Yang(杨秉君)4, Lei Yue(岳磊)4, Chao Zuo(左超)4, Yan Cui(崔岩)1,‡, and Jun Luo(罗军)1,2,†   

  1. 1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2 University of Chinese of Academy Sciences(UCAS), Beijing 100049, China;
    3 Semiconductor Technology Innovation Center(Beijing) Corporation, Beijing 100176, China;
    4 ULVAC Research Center Suzhou CO., Ltd., Suzhou 215026, China
  • 收稿日期:2022-08-20 修回日期:2022-10-09 接受日期:2022-10-14 出版日期:2023-01-10 发布日期:2023-02-07
  • 通讯作者: Jun Luo, Yan Cui E-mail:luojun@ime.ac.cn;cuiyan@ime.ac.cn
  • 基金资助:
    Project supported by Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDA18000000), the Fund from the Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2015097), and Guangzhou City Research and Development Program in Key Fields (Grant No. 202103020001).

Charge-mediated voltage modulation of magnetism in Hf0.5Zr0.5O2/Co multiferroic heterojunction

Jia Chen(陈佳)1,2, Peiyue Yu(于沛玥)1,2, Lei Zhao(赵磊)1,2, Yanru Li(李彦如)1,2, Meiyin Yang(杨美音)1, Jing Xu(许静)1,2, Jianfeng Gao(高建峰)1, Weibing Liu(刘卫兵)1, Junfeng Li(李俊峰)1, Wenwu Wang(王文武)1,2, Jin Kang(康劲)3, Weihai Bu(卜伟海)3, Kai Zheng(郑凯)3, Bingjun Yang(杨秉君)4, Lei Yue(岳磊)4, Chao Zuo(左超)4, Yan Cui(崔岩)1,‡, and Jun Luo(罗军)1,2,†   

  1. 1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2 University of Chinese of Academy Sciences(UCAS), Beijing 100049, China;
    3 Semiconductor Technology Innovation Center(Beijing) Corporation, Beijing 100176, China;
    4 ULVAC Research Center Suzhou CO., Ltd., Suzhou 215026, China
  • Received:2022-08-20 Revised:2022-10-09 Accepted:2022-10-14 Online:2023-01-10 Published:2023-02-07
  • Contact: Jun Luo, Yan Cui E-mail:luojun@ime.ac.cn;cuiyan@ime.ac.cn
  • Supported by:
    Project supported by Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDA18000000), the Fund from the Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2015097), and Guangzhou City Research and Development Program in Key Fields (Grant No. 202103020001).

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摘要： We construct the Hall-bar device with the size of several hundred nanometers based on the HZO/Co multiferroic heterojunction. A remarkable voltage-controlled magnetism is observed in the device that possesses both ferroelectric property and perpendicular magnetic anisotropy (PMA). The nucleation field and coercivity can be modulated by voltage pulse while saturation field keeps stable. The non-volatile and reversible voltage-controlled magnetism is ascribable to interfacial charges caused by ferroelectric polarization. Meanwhile, the effective anisotropy energy density (Ku) can also be controlled by voltage pulse, a decrease of 83% and increase of 28% in Ku are realized under -3-V and 3-V pulses, respectively. Because the energy barrier is directly proportional to Ku under a given volume, a decreased or enhanced energy barrier can be controlled by voltage pulse. Thus, it is an effective method to realize low-power and high-stability magneto-resistive random-access memory (MRAM).

关键词: multiferroic heterojunction, voltage-controlled magnetism, energy barrier

Abstract: We construct the Hall-bar device with the size of several hundred nanometers based on the HZO/Co multiferroic heterojunction. A remarkable voltage-controlled magnetism is observed in the device that possesses both ferroelectric property and perpendicular magnetic anisotropy (PMA). The nucleation field and coercivity can be modulated by voltage pulse while saturation field keeps stable. The non-volatile and reversible voltage-controlled magnetism is ascribable to interfacial charges caused by ferroelectric polarization. Meanwhile, the effective anisotropy energy density (Ku) can also be controlled by voltage pulse, a decrease of 83% and increase of 28% in Ku are realized under -3-V and 3-V pulses, respectively. Because the energy barrier is directly proportional to Ku under a given volume, a decreased or enhanced energy barrier can be controlled by voltage pulse. Thus, it is an effective method to realize low-power and high-stability magneto-resistive random-access memory (MRAM).

Key words: multiferroic heterojunction, voltage-controlled magnetism, energy barrier

中图分类号:  (Magnetoelectric effects, multiferroics)

  • 75.85.+t
75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures)) 77.55.Nv (Multiferroic/magnetoelectric films)