Recent advances in Ga-based solar-blind photodetectors

doi:10.1088/1674-1056/28/2/028502

中国物理B ›› 2019, Vol. 28 ›› Issue (2): 28502-028502.doi: 10.1088/1674-1056/28/2/028502

所属专题： TOPICAL REVIEW — Photodetector: Materials, physics, and applications

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Recent advances in Ga-based solar-blind photodetectors

Ming-sheng Xu(徐明升), Lei Ge(葛磊), Ming-ming Han(韩明明), Jing Huang(黄静), Hua-yong Xu(徐化勇), Zai-xing Yang(杨再兴)

1 School of Microelectronics, Shandong University, Jinan 250100, China;
2 School of Mechatronics Engineering, Guizhou Minzu University, Guiyang 550025, China;
3 Shenzhen Research Institute of Shandong University, Shenzhen 518057, China

收稿日期:2018-10-11 修回日期:2018-12-08 出版日期:2019-02-05 发布日期:2019-02-05
通讯作者: Jing Huang, Zai-xing Yang E-mail:kikihuangjing@163.com;zaixyang@sdu.edu.cn
基金资助:
Project supported by the National Key Reserch and Development Program of China (Grant No. 2017YFA0305500), the Fund from Science Technology and Innovation Committee of Shenzhen Municipality, China (Grant No. JCYJ20170307093131123), the National Natural Science Foundation of China (Grant No. 61504044), the Key Research and Development Program of Shandong Province, China (Grant Nos. 2018GGX101027, 2017GGX201002, 2017CXGC0412, 2016ZDJS09A05, and 2016GGX4101), Shandong Provincial Natural Science Foundation, China (Grant No. ZR2017MF037), “Qilu Young Scholar” Program of Shandong University, Yantai “13th Five-Year” Marine Economic Innovation and Development Demonstration City Project, China (Grant No. YHCX-ZB-L-201703), the Union Funds of Guizhou Science and Technology Department and Guizhou Minzu University, China (Grant No. LH20157221), and the Fundamental Research Funds of Shandong University, China (Grant Nos. 2018WLJH87 and 2017TB0021).

Recent advances in Ga-based solar-blind photodetectors

Ming-sheng Xu(徐明升)¹, Lei Ge(葛磊)¹, Ming-ming Han(韩明明)^1,3, Jing Huang(黄静)², Hua-yong Xu(徐化勇)¹, Zai-xing Yang(杨再兴)^1,3

1 School of Microelectronics, Shandong University, Jinan 250100, China;
2 School of Mechatronics Engineering, Guizhou Minzu University, Guiyang 550025, China;
3 Shenzhen Research Institute of Shandong University, Shenzhen 518057, China

Received:2018-10-11 Revised:2018-12-08 Online:2019-02-05 Published:2019-02-05
Contact: Jing Huang, Zai-xing Yang E-mail:kikihuangjing@163.com;zaixyang@sdu.edu.cn
Supported by:
Project supported by the National Key Reserch and Development Program of China (Grant No. 2017YFA0305500), the Fund from Science Technology and Innovation Committee of Shenzhen Municipality, China (Grant No. JCYJ20170307093131123), the National Natural Science Foundation of China (Grant No. 61504044), the Key Research and Development Program of Shandong Province, China (Grant Nos. 2018GGX101027, 2017GGX201002, 2017CXGC0412, 2016ZDJS09A05, and 2016GGX4101), Shandong Provincial Natural Science Foundation, China (Grant No. ZR2017MF037), “Qilu Young Scholar” Program of Shandong University, Yantai “13th Five-Year” Marine Economic Innovation and Development Demonstration City Project, China (Grant No. YHCX-ZB-L-201703), the Union Funds of Guizhou Science and Technology Department and Guizhou Minzu University, China (Grant No. LH20157221), and the Fundamental Research Funds of Shandong University, China (Grant Nos. 2018WLJH87 and 2017TB0021).

摘要/Abstract

摘要： Solar-blind ultraviolet photodetectors have many advantages, such as low false alarm rates, the ability to detect weak signals, and high signal-to-noise ratios. Among the various functional solar-blind ultraviolet photodetectors, Ga-based alloys of AlGaN and Ga₂O₃ are the most commonly adopted channel semiconductor materials and have attracted extensive research attention in the past decades. This review presents an overview of the recent progress in Ga-based solar-blind photodetectors. In case of AlGaN-based solar-blind ultraviolet photodetectors, the response properties can be improved by optimizing the AlN nucleation layer and designing the avalanche structure. On the other hand, we also discuss the morphology and growth methods of Ga₂O₃ nanomaterials and their effect on the performance of the corresponding solar-blind photodetectors. The mechanically exfoliated Ga₂O₃ flakes show good potential for ultraviolet detection. Also, Ga₂O₃ nanoflowers and nanowires reveal perfect response to ultraviolet light. Finally, the challenges and future development of Ga-based functional solar-blind ultraviolet photodetectors are summarized.

关键词: solar-blind photodetector, AlGaN, Ga₂O₃

Abstract: Solar-blind ultraviolet photodetectors have many advantages, such as low false alarm rates, the ability to detect weak signals, and high signal-to-noise ratios. Among the various functional solar-blind ultraviolet photodetectors, Ga-based alloys of AlGaN and Ga₂O₃ are the most commonly adopted channel semiconductor materials and have attracted extensive research attention in the past decades. This review presents an overview of the recent progress in Ga-based solar-blind photodetectors. In case of AlGaN-based solar-blind ultraviolet photodetectors, the response properties can be improved by optimizing the AlN nucleation layer and designing the avalanche structure. On the other hand, we also discuss the morphology and growth methods of Ga₂O₃ nanomaterials and their effect on the performance of the corresponding solar-blind photodetectors. The mechanically exfoliated Ga₂O₃ flakes show good potential for ultraviolet detection. Also, Ga₂O₃ nanoflowers and nanowires reveal perfect response to ultraviolet light. Finally, the challenges and future development of Ga-based functional solar-blind ultraviolet photodetectors are summarized.

Key words: solar-blind photodetector, AlGaN, Ga₂O₃

中图分类号: (Photodetectors (including infrared and CCD detectors))

85.60.Gz

61.72.uj (III-V and II-VI semiconductors) 61.82.Fk (Semiconductors)

徐明升, 葛磊, 韩明明, 黄静, 徐化勇, 杨再兴. Recent advances in Ga-based solar-blind photodetectors[J]. 中国物理B, 2019, 28(2): 28502-028502.

Ming-sheng Xu(徐明升), Lei Ge(葛磊), Ming-ming Han(韩明明), Jing Huang(黄静), Hua-yong Xu(徐化勇), Zai-xing Yang(杨再兴). Recent advances in Ga-based solar-blind photodetectors[J]. Chin. Phys. B, 2019, 28(2): 28502-028502.

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Recent advances in Ga-based solar-blind photodetectors

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