中国物理B ›› 2022, Vol. 31 ›› Issue (2): 24205-024205.doi: 10.1088/1674-1056/ac29b3

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A broadband self-powered UV photodetector of a β-Ga2O3/γ-CuI p-n junction

Wei-Ming Sun(孙伟铭)1, Bing-Yang Sun(孙兵阳)1, Shan Li(李山)1, Guo-Liang Ma(麻国梁)1, Ang Gao(高昂)1, Wei-Yu Jiang(江为宇)1, Mao-Lin Zhang(张茂林)2,3, Pei-Gang Li(李培刚)1, Zeng Liu(刘增)2,3,†, and Wei-Hua Tang(唐为华)1,2,3,‡   

  1. 1 Laboratory of Information Functional Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
    2 College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
    3 National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
  • 收稿日期:2021-08-03 修回日期:2021-09-14 接受日期:2021-09-24 出版日期:2022-01-13 发布日期:2022-01-22
  • 通讯作者: Zeng Liu, Wei-Hua Tang E-mail:zengliu@njupt.edu.cn;whtang@njupt.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grunt No. 61774019).

A broadband self-powered UV photodetector of a β-Ga2O3/γ-CuI p-n junction

Wei-Ming Sun(孙伟铭)1, Bing-Yang Sun(孙兵阳)1, Shan Li(李山)1, Guo-Liang Ma(麻国梁)1, Ang Gao(高昂)1, Wei-Yu Jiang(江为宇)1, Mao-Lin Zhang(张茂林)2,3, Pei-Gang Li(李培刚)1, Zeng Liu(刘增)2,3,†, and Wei-Hua Tang(唐为华)1,2,3,‡   

  1. 1 Laboratory of Information Functional Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
    2 College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
    3 National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
  • Received:2021-08-03 Revised:2021-09-14 Accepted:2021-09-24 Online:2022-01-13 Published:2022-01-22
  • Contact: Zeng Liu, Wei-Hua Tang E-mail:zengliu@njupt.edu.cn;whtang@njupt.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grunt No. 61774019).

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摘要： The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on the β-Ga2O3 films which are prepared by metal-organic chemical vapor deposition (MOCVD) and the γ-CuI films which are prepared by spin-coating. The fabricated heterojunction has a large open circuit voltage (Voc) of 0.69 V, desired for achieving self-powered operation of a photodetector. Irradiated by 254-nm ultraviolet (UV) light, when the bias voltage is -5 V, the dark current (Idark) of the device is 0.47 pA, the photocurrent (Iphoto) is -50.93 nA, and the photo-to-dark current ratio (Iphoto/Idark) reaches about 1.08×105. The device has a stable and fast response speed in different wavelengths, the rise time (τr) and decay time (τd) are 0.762 s and 1.741 s under 254-nm UV light illumination, respectively. While the τr and τd are 10.709 s and 7.241 s under 365-nm UV light illumination, respectively. The time-dependent (I-t) response (photocurrent in the order of 10-10 A) can be clearly distinguished at a small light intensity of 1 μW·cm-2. The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.

关键词: β-Ga2O3, γ-CuI, heterojunction, broadband photodetector, self-power

Abstract: The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on the β-Ga2O3 films which are prepared by metal-organic chemical vapor deposition (MOCVD) and the γ-CuI films which are prepared by spin-coating. The fabricated heterojunction has a large open circuit voltage (Voc) of 0.69 V, desired for achieving self-powered operation of a photodetector. Irradiated by 254-nm ultraviolet (UV) light, when the bias voltage is -5 V, the dark current (Idark) of the device is 0.47 pA, the photocurrent (Iphoto) is -50.93 nA, and the photo-to-dark current ratio (Iphoto/Idark) reaches about 1.08×105. The device has a stable and fast response speed in different wavelengths, the rise time (τr) and decay time (τd) are 0.762 s and 1.741 s under 254-nm UV light illumination, respectively. While the τr and τd are 10.709 s and 7.241 s under 365-nm UV light illumination, respectively. The time-dependent (I-t) response (photocurrent in the order of 10-10 A) can be clearly distinguished at a small light intensity of 1 μW·cm-2. The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.

Key words: β-Ga2O3, γ-CuI, heterojunction, broadband photodetector, self-power

中图分类号:  (Other nonlinear optical materials; photorefractive and semiconductor materials)

  • 42.70.Nq
42.70.-a (Optical materials) 85.60.Gz (Photodetectors (including infrared and CCD detectors))