中国物理B ›› 2019, Vol. 28 ›› Issue (2): 28503-028503.doi: 10.1088/1674-1056/28/2/028503
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Fa-Ran Chang(常发冉), Rui-Ting Hao(郝瑞亭), Tong-Tong Qi(齐通通), Qi-Chen Zhao(赵其琛), Xin-Xing Liu(刘欣星), Yong Li(李勇), Kang Gu(顾康), Jie Guo(郭杰), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Zhi-Chuan Niu(牛智川)
Fa-Ran Chang(常发冉)1, Rui-Ting Hao(郝瑞亭)1, Tong-Tong Qi(齐通通)1, Qi-Chen Zhao(赵其琛)1, Xin-Xing Liu(刘欣星)1, Yong Li(李勇)1, Kang Gu(顾康)1, Jie Guo(郭杰)1, Guo-Wei Wang(王国伟)2,3, Ying-Qiang Xu(徐应强)2,3, Zhi-Chuan Niu(牛智川)2,3
摘要: In this paper, high material quality Al0.4In0.6AsSb quaternary alloy on GaSb substrates is demonstrated. The quality of these epilayers is assessed using a high-resolution x-ray diffraction, Fourier transform infrared (FTIR) spectrometer, and atomic force microscope (AFM). The x-ray diffraction exhibits high order satellite peaks with a measured period of 31.06 Å (theoretical value is 30.48 Å), the mismatch between the GaSb substrate and AlInAsSb achieves -162 arcsec, and the root-mean square (RMS) roughness for typical material growths has achieved around 1.6 Å over an area of 10 μm×10 μm. At room temperature, the photoluminescence (PL) spectrum shows a cutoff wavelength of 1.617 μm.
中图分类号: (Photodetectors (including infrared and CCD detectors))