中国物理B ›› 2018, Vol. 27 ›› Issue (4): 47101-047101.doi: 10.1088/1674-1056/27/4/047101
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Jin-Lun Li(李金伦), Shao-Hui Cui(崔少辉), Jian-Xing Xu(徐建星), Xiao-Ran Cui(崔晓然), Chun-Yan Guo(郭春妍), Ben Ma(马奔), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川)
Jin-Lun Li(李金伦)1,2, Shao-Hui Cui(崔少辉)1, Jian-Xing Xu(徐建星)2,4, Xiao-Ran Cui(崔晓然)2,5, Chun-Yan Guo(郭春妍)2,6, Ben Ma(马奔)2,3, Hai-Qiao Ni(倪海桥)2,3, Zhi-Chuan Niu(牛智川)2,3
摘要: The samples of InxGa1-xAs/In0.52Al0.48As two-dimensional electron gas (2DEG) are grown by molecular beam epitaxy (MBE). In the sample preparation process, the In content and spacer layer thickness are changed and two kinds of methods, i.e., contrast body doping and δ-doping are used. The samples are analyzed by the Hall measurements at 300 K and 77 K. The InxGa1-xAs/In0.52Al0.48As 2DEG channel structures with mobilities as high as 10289 cm2/V·(300 K) and 42040 cm2/V·(77 K) are obtained, and the values of carrier concentration (Nc) are 3.465×1012/cm2 and 2.502×1012/cm2, respectively. The THz response rates of InP-based high electron mobility transistor (HEMT) structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory. The results provide a reference for the research and preparation of InP-based HEMT THz detectors.
中图分类号: (Electron gas, Fermi gas)