中国物理B ›› 2018, Vol. 27 ›› Issue (4): 47101-047101.doi: 10.1088/1674-1056/27/4/047101

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector

Jin-Lun Li(李金伦), Shao-Hui Cui(崔少辉), Jian-Xing Xu(徐建星), Xiao-Ran Cui(崔晓然), Chun-Yan Guo(郭春妍), Ben Ma(马奔), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川)   

  1. 1. Department of Missile Engineering, Shijiazhuang Campus, Army Engineering University, Shijiazhuang 050003, China;
    2. State Key Laboratory for Superlattices, Institute of Semiconductors, Chinese Academy of Sciences(CAS), Beijing 100083, China;
    3. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    4. Microsystem & Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China;
    5. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an 710071, China;
    6. Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology of Chinese Academy of Sciences, Xi'an Institute of Optics and Precision Mechanics, Xi'an 710119, China
  • 收稿日期:2017-12-01 修回日期:2017-12-24 出版日期:2018-04-05 发布日期:2018-04-05
  • 通讯作者: Hai-Qiao Ni E-mail:nihq@semi.ac.cn
  • 基金资助:
    Project supported by the Foundation for Scientific Instrument and Equipment Development, Chinese Academy of Sciences (Grant No. YJKYYQ20170032) and the National Natural Science Foundation of China (Grant No. 61435012).

Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector

Jin-Lun Li(李金伦)1,2, Shao-Hui Cui(崔少辉)1, Jian-Xing Xu(徐建星)2,4, Xiao-Ran Cui(崔晓然)2,5, Chun-Yan Guo(郭春妍)2,6, Ben Ma(马奔)2,3, Hai-Qiao Ni(倪海桥)2,3, Zhi-Chuan Niu(牛智川)2,3   

  1. 1. Department of Missile Engineering, Shijiazhuang Campus, Army Engineering University, Shijiazhuang 050003, China;
    2. State Key Laboratory for Superlattices, Institute of Semiconductors, Chinese Academy of Sciences(CAS), Beijing 100083, China;
    3. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    4. Microsystem & Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China;
    5. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an 710071, China;
    6. Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology of Chinese Academy of Sciences, Xi'an Institute of Optics and Precision Mechanics, Xi'an 710119, China
  • Received:2017-12-01 Revised:2017-12-24 Online:2018-04-05 Published:2018-04-05
  • Contact: Hai-Qiao Ni E-mail:nihq@semi.ac.cn
  • Supported by:
    Project supported by the Foundation for Scientific Instrument and Equipment Development, Chinese Academy of Sciences (Grant No. YJKYYQ20170032) and the National Natural Science Foundation of China (Grant No. 61435012).

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摘要： The samples of InxGa1-xAs/In0.52Al0.48As two-dimensional electron gas (2DEG) are grown by molecular beam epitaxy (MBE). In the sample preparation process, the In content and spacer layer thickness are changed and two kinds of methods, i.e., contrast body doping and δ-doping are used. The samples are analyzed by the Hall measurements at 300 K and 77 K. The InxGa1-xAs/In0.52Al0.48As 2DEG channel structures with mobilities as high as 10289 cm2/V·(300 K) and 42040 cm2/V·(77 K) are obtained, and the values of carrier concentration (Nc) are 3.465×1012/cm2 and 2.502×1012/cm2, respectively. The THz response rates of InP-based high electron mobility transistor (HEMT) structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory. The results provide a reference for the research and preparation of InP-based HEMT THz detectors.

关键词: THz detector, high electron mobility transistor, two-dimensional electron gas, InP

Abstract: The samples of InxGa1-xAs/In0.52Al0.48As two-dimensional electron gas (2DEG) are grown by molecular beam epitaxy (MBE). In the sample preparation process, the In content and spacer layer thickness are changed and two kinds of methods, i.e., contrast body doping and δ-doping are used. The samples are analyzed by the Hall measurements at 300 K and 77 K. The InxGa1-xAs/In0.52Al0.48As 2DEG channel structures with mobilities as high as 10289 cm2/V·(300 K) and 42040 cm2/V·(77 K) are obtained, and the values of carrier concentration (Nc) are 3.465×1012/cm2 and 2.502×1012/cm2, respectively. The THz response rates of InP-based high electron mobility transistor (HEMT) structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory. The results provide a reference for the research and preparation of InP-based HEMT THz detectors.

Key words: THz detector, high electron mobility transistor, two-dimensional electron gas, InP

中图分类号:  (Electron gas, Fermi gas)

  • 71.10.Ca
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 81.05.Ea (III-V semiconductors)