High performance InAlN/GaN high electron mobility transistors for low voltage applications

doi:10.1088/1674-1056/ab821e

中国物理B ›› 2020, Vol. 29 ›› Issue (5): 57307-057307.doi: 10.1088/1674-1056/ab821e

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

High performance InAlN/GaN high electron mobility transistors for low voltage applications

Minhan Mi(宓珉瀚), Meng Zhang(张濛), Sheng Wu(武盛), Ling Yang(杨凌), Bin Hou(侯斌), Yuwei Zhou(周雨威), Lixin Guo(郭立新), Xiaohua Ma(马晓华), Yue Hao(郝跃)

1 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
3 School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China

收稿日期:2020-02-25 修回日期:2020-03-16 出版日期:2020-05-05 发布日期:2020-05-05
通讯作者: Minhan Mi, Meng Zhang E-mail:miminhan@qq.com;498078211@qq.com
基金资助:
Project supported by the China Postdoctoral Science Foundation (Grant No. 2018M640957), the Fundamental Research Funds for the Central Universities, China (Grant No. 20101196761), the National Natural Science Foundation of China (Grant No. 61904135), the National Defense Pre-Research Foundation of China (Grant No. 31513020307), and the Natural Science Foundation of Shaanxi Province of China (Grant No. 2020JQ-316).

High performance InAlN/GaN high electron mobility transistors for low voltage applications

Minhan Mi(宓珉瀚)¹, Meng Zhang(张濛)¹, Sheng Wu(武盛)¹, Ling Yang(杨凌)², Bin Hou(侯斌)¹, Yuwei Zhou(周雨威)², Lixin Guo(郭立新)³, Xiaohua Ma(马晓华)¹, Yue Hao(郝跃)¹

1 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
3 School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China

Received:2020-02-25 Revised:2020-03-16 Online:2020-05-05 Published:2020-05-05
Contact: Minhan Mi, Meng Zhang E-mail:miminhan@qq.com;498078211@qq.com
Supported by:
Project supported by the China Postdoctoral Science Foundation (Grant No. 2018M640957), the Fundamental Research Funds for the Central Universities, China (Grant No. 20101196761), the National Natural Science Foundation of China (Grant No. 61904135), the National Defense Pre-Research Foundation of China (Grant No. 31513020307), and the Natural Science Foundation of Shaanxi Province of China (Grant No. 2020JQ-316).

摘要/Abstract

摘要： A high performance InAlN/GaN high electron mobility transistor (HEMT) at low voltage operation (6-10 V drain voltage) has been fabricated. An 8 nm InAlN barrier layer is adopted to generate large 2DEG density thus to reduce sheet resistance. Highly scaled lateral dimension (1.2 μm source-drain spacing) is to reduce access resistance. Both low sheet resistance of the InAlN/GaN structure and scaled lateral dimension contribute to an high extrinsic transconductance of 550 mS/mm and a large drain current of 2.3 A/mm with low on-resistance (R_on) of 0.9 Ω·mm. Small signal measurement shows an f_T/f_max of 131 GHz/196 GHz. Large signal measurement shows that the InAlN/GaN HEMT can yield 64.7%-52.7% (V_ds=6-10 V) power added efficiency (PAE) associated with 1.6-2.4 W/mm output power density at 8 GHz. These results demonstrate that GaN-based HEMTs not only have advantages in the existing high voltage power and high frequency rf field, but also are attractive for low voltage mobile compatible rf applications.

关键词: InAlN/GaN, high electron mobility transistor (HEMT), low voltage

Abstract: A high performance InAlN/GaN high electron mobility transistor (HEMT) at low voltage operation (6-10 V drain voltage) has been fabricated. An 8 nm InAlN barrier layer is adopted to generate large 2DEG density thus to reduce sheet resistance. Highly scaled lateral dimension (1.2 μm source-drain spacing) is to reduce access resistance. Both low sheet resistance of the InAlN/GaN structure and scaled lateral dimension contribute to an high extrinsic transconductance of 550 mS/mm and a large drain current of 2.3 A/mm with low on-resistance (R_on) of 0.9 Ω·mm. Small signal measurement shows an f_T/f_max of 131 GHz/196 GHz. Large signal measurement shows that the InAlN/GaN HEMT can yield 64.7%-52.7% (V_ds=6-10 V) power added efficiency (PAE) associated with 1.6-2.4 W/mm output power density at 8 GHz. These results demonstrate that GaN-based HEMTs not only have advantages in the existing high voltage power and high frequency rf field, but also are attractive for low voltage mobile compatible rf applications.

Key words: InAlN/GaN, high electron mobility transistor (HEMT), low voltage

中图分类号: (Electronic transport phenomena in thin films)

73.50.-h

73.61.-r (Electrical properties of specific thin films) 85.90.+h (Other topics in electronic and magnetic devices and microelectronics)

宓珉瀚, 张濛, 武盛, 杨凌, 侯斌, 周雨威, 郭立新, 马晓华, 郝跃. High performance InAlN/GaN high electron mobility transistors for low voltage applications[J]. 中国物理B, 2020, 29(5): 57307-057307.

Minhan Mi(宓珉瀚), Meng Zhang(张濛), Sheng Wu(武盛), Ling Yang(杨凌), Bin Hou(侯斌), Yuwei Zhou(周雨威), Lixin Guo(郭立新), Xiaohua Ma(马晓华), Yue Hao(郝跃). High performance InAlN/GaN high electron mobility transistors for low voltage applications[J]. Chin. Phys. B, 2020, 29(5): 57307-057307.

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High performance InAlN/GaN high electron mobility transistors for low voltage applications

High performance InAlN/GaN high electron mobility transistors for low voltage applications

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