中国物理B ›› 2017, Vol. 26 ›› Issue (11): 116801-116801.doi: 10.1088/1674-1056/26/11/116801

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Structural characterization of indium-rich nanoprecipitate in InGaN V-pits formed by annealing

Junjun Xue(薛俊俊), Qing Cai(蔡青), Baohua Zhang(张保花), Mei Ge(葛梅), Dunjun Chen(陈敦军), Ting Zhi(智婷), Jiangwei Chen(陈将伟), Lianhui Wang(汪联辉), Rong Zhang(张荣), Youdou Zheng(郑有炓)   

  1. 1. School of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
    2. School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    3. Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
  • 收稿日期:2017-04-22 修回日期:2017-08-21 出版日期:2017-11-05 发布日期:2017-11-05
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61604080, 61574079, 61634002, and 61474060), Natural Science Foundation of Jiangsu Province, China (Grant No. BK20160883), University Science Research Project of Jiangsu Province, China (Grant Nos. 16KJB140011 and 14KJB510020), and NUPTSF, China (Grant No. NY214154).

Structural characterization of indium-rich nanoprecipitate in InGaN V-pits formed by annealing

Junjun Xue(薛俊俊)1,3, Qing Cai(蔡青)2, Baohua Zhang(张保花)2, Mei Ge(葛梅)2, Dunjun Chen(陈敦军)2, Ting Zhi(智婷)1, Jiangwei Chen(陈将伟)1, Lianhui Wang(汪联辉)3, Rong Zhang(张荣)2, Youdou Zheng(郑有炓)2   

  1. 1. School of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
    2. School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    3. Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
  • Received:2017-04-22 Revised:2017-08-21 Online:2017-11-05 Published:2017-11-05
  • Contact: Dunjun Chen E-mail:djchen@nju.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61604080, 61574079, 61634002, and 61474060), Natural Science Foundation of Jiangsu Province, China (Grant No. BK20160883), University Science Research Project of Jiangsu Province, China (Grant Nos. 16KJB140011 and 14KJB510020), and NUPTSF, China (Grant No. NY214154).

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摘要：

InGaN layers capped with GaN were annealed at 550℃ for 1 hour. During annealing, cracks appeared and dissolved InGaN penetrated through the microcracks into the V-pits to form indium-rich nanoprecipitates. Some precipitates, in-situ annealed under nitrogen ion irradiation by MBE, were confirmed to be cubic GaN on the tops of precipitates, formed by nitriding the pre-existing Ga droplets under nitrogen ions irradiation.

关键词: annealing, InGaN, precipitate

Abstract:

InGaN layers capped with GaN were annealed at 550℃ for 1 hour. During annealing, cracks appeared and dissolved InGaN penetrated through the microcracks into the V-pits to form indium-rich nanoprecipitates. Some precipitates, in-situ annealed under nitrogen ion irradiation by MBE, were confirmed to be cubic GaN on the tops of precipitates, formed by nitriding the pre-existing Ga droplets under nitrogen ions irradiation.

Key words: annealing, InGaN, precipitate

中图分类号:  (Scanning electron microscopy (SEM) (including EBIC))

  • 68.37.Hk
68.37.Lp (Transmission electron microscopy (TEM)) 61.46.Hk (Nanocrystals) 71.55.Eq (III-V semiconductors)