中国物理B ›› 2017, Vol. 26 ›› Issue (11): 116802-116802.doi: 10.1088/1674-1056/26/11/116802
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
Lu Zhang(张璐), Hai-Yang Hong(洪海洋), Yi-Sen Wang(王一森), Cheng Li(李成), Guang-Yang Lin(林光杨), Song-Yan Chen(陈松岩), Wei Huang(黄巍), Jian-Yuan Wang(汪建元)
Lu Zhang(张璐), Hai-Yang Hong(洪海洋), Yi-Sen Wang(王一森), Cheng Li(李成), Guang-Yang Lin(林光杨), Song-Yan Chen(陈松岩), Wei Huang(黄巍), Jian-Yuan Wang(汪建元)
摘要:
Polycrystalline Ge1-xSnx (poly-Ge1-xSnx) alloy thin films with high Sn content (> 10%) were fabricated by co-sputtering amorphous GeSn (a-GeSn) on Ge (100) wafers and subsequently pulsed laser annealing with laser energy density in the range of 250 mJ/cm2 to 550 mJ/cm2. High quality poly-crystal Ge0.90Sn0.10 and Ge0.82Sn0.18 films with average grain sizes of 94 nm and 54 nm were obtained, respectively. Sn segregation at the grain boundaries makes Sn content in the poly-GeSn alloys slightly less than that in the corresponding primary a-GeSn. The crystalline grain size is reduced with the increase of the laser energy density or higher Sn content in the primary a-GeSn films due to the booming of nucleation numbers. The Raman peak shift of Ge-Ge mode in the poly crystalline GeSn can be attributed to Sn substitution, strain, and disorder. The dependence of Raman peak shift of the Ge-Ge mode caused by strain and disorder in GeSn films on full-width at half-maximum (FWHM) is well quantified by a linear relationship, which provides an effective method to evaluate the quality of poly-Ge1-xSnx by Raman spectra.
中图分类号: (Semiconductors)