Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor

doi:10.1088/1674-1056/24/2/028504

中国物理B ›› 2015, Vol. 24 ›› Issue (2): 28504-028504.doi: 10.1088/1674-1056/24/2/028504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor

吕利^{a b}, 孙建东^a, Roger A. Lewis^c, 孙云飞^d, 吴东岷^{a d}, 蔡勇^a, 秦华^a

a Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
b Graduate University of Chinese Academy of Sciences, Beijing 100049, China;
c Institute for Superconducting and Electronic Materials and School of Physics, University of Wollongong, Wollongong, New South Wales 2522, Australia;
d i-Lab, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

收稿日期:2014-08-16 修回日期:2014-09-23 出版日期:2015-02-05 发布日期:2015-02-05
基金资助:
Project partially supported by the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-705), China Postdoctoral Science Foundation (Grant No. 2014M551678), Jiangsu Planned Projects for Postdoctoral Research Funds (Grant No. 1301054B), Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YZ201152), the National Natural Science Foundation of China (Grant No. 61271157), Suzhou Science and Technology Project (Grant No. ZXG2012024), and the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists (Grant No. 2010T2J07).

Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor

Lü Li (吕利)^{a b}, Sun Jian-Dong (孙建东)^a, Roger A. Lewis^c, Sun Yun-Fei (孙云飞)^d, Wu Dong-Min (吴东岷)^{a d}, Cai Yong (蔡勇)^a, Qin Hua (秦华)^a

a Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
b Graduate University of Chinese Academy of Sciences, Beijing 100049, China;
c Institute for Superconducting and Electronic Materials and School of Physics, University of Wollongong, Wollongong, New South Wales 2522, Australia;
d i-Lab, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

Received:2014-08-16 Revised:2014-09-23 Online:2015-02-05 Published:2015-02-05
Contact: Sun Jian-Dong, Qin Hua E-mail:dsun2008@sinano.ac.cn;hqin2007@sinano.ac.cn
Supported by:
Project partially supported by the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-705), China Postdoctoral Science Foundation (Grant No. 2014M551678), Jiangsu Planned Projects for Postdoctoral Research Funds (Grant No. 1301054B), Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YZ201152), the National Natural Science Foundation of China (Grant No. 61271157), Suzhou Science and Technology Project (Grant No. ZXG2012024), and the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists (Grant No. 2010T2J07).

摘要/Abstract

摘要： In the terahertz (THz) regime, the active region for a solid-state detector usually needs to be implemented accurately in the near-field region of an on-chip antenna. Mapping of the near-field strength could allow for rapid verification and optimization of new antenna/detector designs. Here, we report a proof-of-concept experiment in which the field mapping is realized by a scanning metallic probe and a fixed AlGaN/GaN field-effect transistor. Experiment results agree well with the electromagnetic-wave simulations. The results also suggest a field-effect THz detector combined with a probe tip could serve as a high sensitivity THz near-field sensor.

关键词: terahertz detector, terahertz antenna, near-field probe, high electron mobility transistor

Abstract: In the terahertz (THz) regime, the active region for a solid-state detector usually needs to be implemented accurately in the near-field region of an on-chip antenna. Mapping of the near-field strength could allow for rapid verification and optimization of new antenna/detector designs. Here, we report a proof-of-concept experiment in which the field mapping is realized by a scanning metallic probe and a fixed AlGaN/GaN field-effect transistor. Experiment results agree well with the electromagnetic-wave simulations. The results also suggest a field-effect THz detector combined with a probe tip could serve as a high sensitivity THz near-field sensor.

Key words: terahertz detector, terahertz antenna, near-field probe, high electron mobility transistor

中图分类号: (Photodetectors (including infrared and CCD detectors))

85.60.Gz

72.80.Ey (III-V and II-VI semiconductors) 87.64.mt (Near-field scanning)

吕利, 孙建东, Roger A. Lewis, 孙云飞, 吴东岷, 蔡勇, 秦华. Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor[J]. 中国物理B, 2015, 24(2): 28504-028504.

Lü Li (吕利), Sun Jian-Dong (孙建东), Roger A. Lewis, Sun Yun-Fei (孙云飞), Wu Dong-Min (吴东岷), Cai Yong (蔡勇), Qin Hua (秦华). Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor[J]. Chin. Phys. B, 2015, 24(2): 28504-028504.

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Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor

Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor

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