中国物理B ›› 2016, Vol. 25 ›› Issue (11): 117305-117305.doi: 10.1088/1674-1056/25/11/117305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment

Yun-Long He(何云龙), Chong Wang(王冲), Min-Han Mi(宓珉瀚), Xue-Feng Zheng(郑雪峰), Meng Zhang(张濛), Meng-Di Zhao(赵梦荻), Heng-Shuang Zhang(张恒爽), Li-Xiang Chen(陈立香), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃)   

  1. 1 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
    2 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China
  • 收稿日期:2016-06-15 修回日期:2016-08-17 出版日期:2016-11-05 发布日期:2016-11-05
  • 通讯作者: Chong Wang E-mail:chongw@xidian.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61574110, 61334002, and 61474091) and the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2015AA016801).

Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment

Yun-Long He(何云龙)1, Chong Wang(王冲)1, Min-Han Mi(宓珉瀚)1, Xue-Feng Zheng(郑雪峰)1, Meng Zhang(张濛)2, Meng-Di Zhao(赵梦荻)1, Heng-Shuang Zhang(张恒爽)1, Li-Xiang Chen(陈立香)2, Jin-Cheng Zhang(张进成)1, Xiao-Hua Ma(马晓华)1,2, Yue Hao(郝跃)1,2   

  1. 1 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
    2 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China
  • Received:2016-06-15 Revised:2016-08-17 Online:2016-11-05 Published:2016-11-05
  • Contact: Chong Wang E-mail:chongw@xidian.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61574110, 61334002, and 61474091) and the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2015AA016801).

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摘要： In this paper, the enhancement-mode AlGaN/GaN HEMT combined with the low damage recessed-gate etching and the optimized oxygen plasma treatment was fabricated. Scanning electron microscope/energy dispersive spectrometer (SEM/EDS) method and x-ray photoelectron spectroscopy (XPS) method were used to confirm the formation of oxides. Based on the experimental results, the obtained enhancement-mode HEMT exhibited a threshold voltage of 0.5 V, a high peak transconductance of 210 mS/mm, and a maximum drain current of 610 mA/mm at the gate bias of 4 V. Meanwhile, the on/off current ratio of enhancement-mode HEMT was as high as 108, drain induced barrier lowering (DIBL) was as low as 5 mV/V, and subthreshold swing (SS) of 80 mV/decade was obtained. Compared with the conventional HEMT, the Schottky reverse current of enhancement-mode HEMT was three orders of magnitude lower, and the off-state breakdown voltage of which was higher. In addition, a power gain cutoff frequency (fmax) of the enhancement-mode HEMT was larger than that of the conventional one.

关键词: AlGaN/GaN, high electron mobility transistors, recessed-gate, oxygen plasma

Abstract: In this paper, the enhancement-mode AlGaN/GaN HEMT combined with the low damage recessed-gate etching and the optimized oxygen plasma treatment was fabricated. Scanning electron microscope/energy dispersive spectrometer (SEM/EDS) method and x-ray photoelectron spectroscopy (XPS) method were used to confirm the formation of oxides. Based on the experimental results, the obtained enhancement-mode HEMT exhibited a threshold voltage of 0.5 V, a high peak transconductance of 210 mS/mm, and a maximum drain current of 610 mA/mm at the gate bias of 4 V. Meanwhile, the on/off current ratio of enhancement-mode HEMT was as high as 108, drain induced barrier lowering (DIBL) was as low as 5 mV/V, and subthreshold swing (SS) of 80 mV/decade was obtained. Compared with the conventional HEMT, the Schottky reverse current of enhancement-mode HEMT was three orders of magnitude lower, and the off-state breakdown voltage of which was higher. In addition, a power gain cutoff frequency (fmax) of the enhancement-mode HEMT was larger than that of the conventional one.

Key words: AlGaN/GaN, high electron mobility transistors, recessed-gate, oxygen plasma

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
81.05.Ea (III-V semiconductors) 85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Tv (Field effect devices)