High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition

doi:10.1088/1674-1056/28/1/018102

中国物理B ›› 2019, Vol. 28 ›› Issue (1): 18102-018102.doi: 10.1088/1674-1056/28/1/018102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition

Ya-Chao Zhang(张雅超), Zhi-Zhe Wang(王之哲), Rui Guo(郭蕊), Ge Liu(刘鸽), Wei-Min Bao(包为民), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)

1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
2. China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China;
3. School of Aerospace Science and Technology, Xidian University, Xi'an 710071, China

收稿日期:2018-08-25 修回日期:2018-10-22 发布日期:2019-01-25
通讯作者: Ya-Chao Zhang E-mail:xd_zhangyachao@163.com
基金资助:
Project supported by the National Postdoctoral Program for Innovative Talents, China (Grant No. BX201700184) and the National Key Research and Development Program of China (Grant Nos. 2016YFB0400105 and 2017YFB0403102).

High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition

Ya-Chao Zhang(张雅超)¹, Zhi-Zhe Wang(王之哲)², Rui Guo(郭蕊)¹, Ge Liu(刘鸽)¹, Wei-Min Bao(包为民)³, Jin-Cheng Zhang(张进成)¹, Yue Hao(郝跃)¹

1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
2. China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China;
3. School of Aerospace Science and Technology, Xidian University, Xi'an 710071, China

Received:2018-08-25 Revised:2018-10-22 Published:2019-01-25
Contact: Ya-Chao Zhang E-mail:xd_zhangyachao@163.com
About author:73.40.Kp; 81.05.Ea; 85.30.De
Supported by:
Project supported by the National Postdoctoral Program for Innovative Talents, China (Grant No. BX201700184) and the National Key Research and Development Program of China (Grant Nos. 2016YFB0400105 and 2017YFB0403102).

摘要/Abstract

摘要：

Pulsed metal organic chemical vapor deposition was employed to grow nearly polarization matched InAlGaN/GaN heterostructures. A relatively low sheet carrier density of 1.8×1012 cm^-2, together with a high electron mobility of 1229.5 cm²/V·s, was obtained for the prepared heterostructures. The surface morphology of the heterostructures was also significantly improved, i.e., with a root mean square roughness of 0.29 nm in a 2 μm×2 μm scan area. In addition to the improved properties, the enhancement-mode metal–oxide–semiconductor high electron mobility transistors (MOSHEMTs) processed on the heterostructures not only exhibited a high threshold voltage (V_TH) of 3.1 V, but also demonstrated a significantly enhanced drain output current density of 669 mA/mm. These values probably represent the largest values obtained from the InAlGaN based enhancement-mode devices to the best of our knowledge. This study strongly indicates that the InAlGaN/GaN heterostructures grown by pulsed metal organic chemical vapor deposition could be promising for the applications of novel nitride-based electronic devices.

关键词: InAlGaN, enhancement-mode, metal-oxide-semiconductor high electron mobility transistor, threshold voltage

Abstract:

Key words: InAlGaN, enhancement-mode, metal-oxide-semiconductor high electron mobility transistor, threshold voltage

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

81.05.Ea (III-V semiconductors) 85.30.De (Semiconductor-device characterization, design, and modeling)

张雅超, 王之哲, 郭蕊, 刘鸽, 包为民, 张进成, 郝跃. High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition[J]. 中国物理B, 2019, 28(1): 18102-018102.

Ya-Chao Zhang(张雅超), Zhi-Zhe Wang(王之哲), Rui Guo(郭蕊), Ge Liu(刘鸽), Wei-Min Bao(包为民), Jin-Cheng Zhang(张进成), Yue Hao(郝跃). High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition[J]. Chin. Phys. B, 2019, 28(1): 18102-018102.

参考文献 29

[1]	Khan M A, Bhattarai A, Kuznia J N and Olson D T 1993 Appl. Phys. Lett. 63 1214 doi: 10.1063/1.109775
[2]	Wang Y G, Feng Z H, Lv Y J, Tan X, Dun S B, Fang Y L and Cai S J 2016 Chin. Phys. B 25 107106 doi: 10.1088/1674-1056/25/10/107106
[3]	Li J, Lv Y, Li C, Ji Z, Pang Z, Xu X and Xu M 2017 Chin. Phys. B 26 098504 doi: 10.1088/1674-1056/26/9/098504
[4]	Khan M A, Chen Q, Sun C J, Yang J W, Blasingame M, Shur M S and Park H 1996 Appl. Phys. Lett. 68 514 doi: 10.1063/1.116384
[5]	Lu B, Saadat O I and Palacios T 2010 IEEE Electron Device Lett. 31 990 doi: 10.1109/LED.2010.2055825
[6]	Hahn H, Lükens G, Ketteniss N, Kalisch H and Vescan A 2011 Appl. Phys. Express 4 114102 doi: 10.1143/APEX.4.114102
[7]	Cai Y, Zhou Y G, Chen K J and Lau K M 2005 IEEE Electron Device Lett. 26 435 doi: 10.1109/LED.2005.851122
[8]	Cai Y, Zhou Y G, Lau K M and Chen K J 2006 IEEE Trans. Electron. Devices 53 2207 doi: 10.1109/TED.2006.881054
[9]	Wang R, Cai Y, Tang W, Lau K M and Chen K J 2006 EEE Electron. Device Lett. 27 633 doi: 10.1109/LED.2006.879046
[10]	Deguchi T, Kikuchi T, Arai M and Yamasaki K 2012 IEEE Electron Device Lett. 33 1249 doi: 10.1109/LED.2012.2204854
[11]	Mizutani T, Yamada H, Kishimoto S and Nakamura F 2013 J. Appl. Phys. 113 034502 doi: 10.1063/1.4775494
[12]	Wang M, Wang Y, Zhang C, Xie B, Wen C, Wang J, Hao Y L, Wu W G, Chen K J and Shen B 2014 IEEE Trans. Electron. Devices 61 2035 doi: 10.1109/TED.2014.2315994
[13]	Liu Y, Egawa T and Jiang H 2006 Electron. Lett. 42 884 doi: 10.1049/el:20061150
[14]	Ketteniss N, Askar A, Reuters B, Noculak A, Hollyänder B, Kalisch H and Vescan A 2012 Semicond. Sci. Technol. 27 055012 doi: 10.1088/0268-1242/27/5/055012
[15]	Hahn H, Reuters B, Wille A, Ketteniss N, Benkhelifa F, Ambacher O, Kalisch H and Vescan A 2012 Semicond. Sci. Technol. 27 055004 doi: 10.1088/0268-1242/27/5/055004
[16]	Ketteniss N, Behmenburg H, Hahn H, Noculak A, Holländer B, Kalisch H, Heuken M and Vescan A 2012 IEEE Electron Device Lett. 33 519 doi: 10.1109/LED.2012.2184735
[17]	Reuters B, Wille A, Ketteniss N, Hahn H, Hollyänder B, Heuken M, Kalisch H and Vescan A 2013 J. Electron. Mater. 42 826 doi: 10.1007/s11664-013-2473-7
[18]	Jena D, Simon J, Wang A, Cao Y, Goodman K, Verma J, Ganguly S, Li G, Karda K, Protasenko V, Lian C, Kosel T, Fay P and Xing H 2011 Phys. Status Solidi A 208 1511 doi: 10.1002/pssa.201001189
[19]	Liu Y, Jiang H, Arulkumaran S, Egawa T, Zhang B and Ishikawa H 2005 Appl. Phys. Lett. 86 223510 doi: 10.1063/1.1942643
[20]	Xue J, Hao Y, Zhou X, Zhang J, Yang C, Ou X, Shi L, Wang H, Yang L and Zhang J 2011 J. Cryst. Growth 314 359 doi: 10.1016/j.jcrysgro.2010.11.157
[21]	Zhang Y, Zhou X, Xu S, Wang Z, Chen Z, Zhang J, Zhang J and Hao Y 2015 AIP Adv. 5 127102 doi: 10.1063/1.4937127
[22]	Zhang Y, Zhou X, Xu S, Chen D, Wang Z, Wang X, Zhang J, Zhang J and Hao Y 2016 Chin. Phys. B 25 018102 doi: 10.1088/1674-1056/25/1/018102
[23]	Zhang Y, Zhou X, Xu S, Zhang J, Zhang J and Hao Y 2016 Appl. Phys. Express 9 061003 doi: 10.7567/APEX.9.061003
[24]	Zhang Y, Wang Z, Xu S, Chen D, Bao W, Zhang J, Zhang J and Hao Y 2017 Appl. Phys. Lett. 111 222107 doi: 10.1063/1.4994656
[25]	Zhang Y, Wang Z, Xu S, Bao W, Zhang T, Huang J, Zhang J and Hao Y 2018 Mater. Res. Bull. 105 368 doi: 10.1016/j.materresbull.2018.04.055
[26]	Yu S F, Chang S J, Lin R M, Lin Y H, Lu Y C, Chang S P and Chiou Y Z 2010 J. Cryst. Growth 312 1920 doi: 10.1016/j.jcrysgro.2010.03.027
[27]	Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W and Hilsenbeck J 1999 J. Appl. Phys. 85 3222 doi: 10.1063/1.369664
[28]	Ambacher O, Majewski J, Miskys C, Link A, Hermann M, Eickhoff M, Stutzmann M, Bernardini F, Fiorentini V, Tilak V, Schaff B and Eastman L F 2002 J. Phys. Condens. Matter. 14 3399 doi: 10.1088/0953-8984/14/13/302
[29]	He Y, Mi M, Wang C, Zheng X, Zhang M, Zhang H, Wu J, Yang L, Zhang P, Ma X and Hao Y 2017 IEEE Electron Device Lett. 38 1421 doi: 10.1109/LED.2017.2736780

High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition

High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 29

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Meixia Cheng(程梅霞), Suzhen Luan(栾苏珍), Hailin Wang(王海林), and Renxu Jia(贾仁需). Design and research of normally-off β-Ga₂O₃/4H-SiC heterojunction field effect transistor[J]. 中国物理B, 2023, 32(3): 37302-037302.
[2]	Guangbao Lu(陆广宝), Jun Liu(刘俊), Chuanguo Zhang(张传国), Yang Gao(高扬), and Yonggang Li(李永钢). Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices[J]. 中国物理B, 2023, 32(1): 18506-018506.
[3]	Chen Wang(王琛), Wenmo Lu(路文墨), Fengnan Li(李奉南), Qiaomei Luo(罗巧梅), and Fei Ma(马飞)^†. Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs[J]. 中国物理B, 2022, 31(9): 96101-096101.
[4]	Si-De Song(宋思德), Guo-Zhu Liu(刘国柱), Qi He(贺琪), Xiang Gu(顾祥), Gen-Shen Hong(洪根深), and Jian-Wei Wu(吴建伟). Combined effects of cycling endurance and total ionizing dose on floating gate memory cells[J]. 中国物理B, 2022, 31(5): 56107-056107.
[5]	Liangliang Guo(郭亮良), Yuming Zhang(张玉明), Suzhen Luan(栾苏珍), Rundi Qiao(乔润迪), and Renxu Jia(贾仁需). Study on a novel vertical enhancement-mode Ga₂O₃ MOSFET with FINFET structure[J]. 中国物理B, 2022, 31(1): 17304-017304.
[6]	Sheng Wu(武盛), Minhan Mi(宓珉瀚), Xiaohua Ma(马晓华), Ling Yang(杨凌), Bin Hou(侯斌), and Yue Hao(郝跃). High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an f_T/f_max over 100 GHz/200 GHz[J]. 中国物理B, 2021, 30(8): 87102-087102.
[7]	Ruo-Han Li(李若晗), Wu-Xiong Fei(费武雄), Rui Tang(唐锐), Zhao-Xi Wu(吴照玺), Chao Duan(段超), Tao Zhang(张涛), Dan Zhu(朱丹), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃). Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure[J]. 中国物理B, 2021, 30(8): 87305-087305.
[8]	赵垚澎, 王冲, 郑雪峰, 马晓华, 刘凯, 李昂, 何云龙, 郝跃. Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO₂ and Al₂O₃ gate insulators[J]. 中国物理B, 2020, 29(8): 87304-087304.
[9]	朱青, 马晓华, 陈怡霖, 侯斌, 祝杰杰, 张濛, 武玫, 杨凌, 郝跃. Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs[J]. 中国物理B, 2020, 29(4): 47304-047304.
[10]	张东, 武辰飞, 徐尉宗, 任芳芳, 周东, 于芃, 张荣, 郑有炓, 陆海. Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors[J]. 中国物理B, 2019, 28(1): 17303-017303.
[11]	王冲, 王鑫, 郑雪峰, 王允, 何云龙, 田野, 何晴, 吴忌, 毛维, 马晓华, 张进成, 郝跃. Characteristics and threshold voltage model of GaN-based FinFET with recessed gate[J]. 中国物理B, 2018, 27(9): 97308-097308.
[12]	段小玲, 张进成, 肖明, 赵一, 宁静, 郝跃. Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures[J]. 中国物理B, 2016, 25(8): 87304-087304.
[13]	刘凡宇, 刘衡竹, 刘必慰, 郭宇峰. An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect[J]. 中国物理B, 2016, 25(4): 47305-047305.
[14]	辛艳辉, 袁胜, 刘明堂, 刘红侠, 袁合才. Two-dimensional models of threshold voltage andsubthreshold current for symmetrical double-material double-gate strained Si MOSFETs[J]. 中国物理B, 2016, 25(3): 38502-038502.
[15]	康海燕, 胡辉勇, 王斌. Analytical threshold voltage model for strained silicon GAA-TFET[J]. 中国物理B, 2016, 25(11): 118501-118501.