Effect of defects properties on InP-based high electron mobility transistors

doi:10.1088/1674-1056/28/7/078501

中国物理B ›› 2019, Vol. 28 ›› Issue (7): 78501-078501.doi: 10.1088/1674-1056/28/7/078501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Effect of defects properties on InP-based high electron mobility transistors

Shu-Xiang Sun(孙树祥), Ming-Ming Chang(常明铭), Meng-Ke Li(李梦珂), Liu-Hong Ma(马刘红), Ying-Hui Zhong(钟英辉), Yu-Xiao Li(李玉晓), Peng Ding(丁芃), Zhi Jin(金智), Zhi-Chao Wei(魏志超)

1 School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
3 China Academy of Space Technology, Beijing 100086, China

收稿日期:2019-03-14 修回日期:2019-04-17 出版日期:2019-07-05 发布日期:2019-07-05
通讯作者: Ying-Hui Zhong E-mail:zhongyinghui@zzu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11775191, 61404115, 61434006, and 11475256), the Development Fund for Outstanding Young Teachers in Zhengzhou University of China (Grant No. 1521317004), and the Doctoral Student Overseas Study Program of Zhengzhou University, China.

Effect of defects properties on InP-based high electron mobility transistors

Shu-Xiang Sun(孙树祥)¹, Ming-Ming Chang(常明铭)¹, Meng-Ke Li(李梦珂)¹, Liu-Hong Ma(马刘红)¹, Ying-Hui Zhong(钟英辉)¹, Yu-Xiao Li(李玉晓)¹, Peng Ding(丁芃)², Zhi Jin(金智)², Zhi-Chao Wei(魏志超)³

1 School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
3 China Academy of Space Technology, Beijing 100086, China

Received:2019-03-14 Revised:2019-04-17 Online:2019-07-05 Published:2019-07-05
Contact: Ying-Hui Zhong E-mail:zhongyinghui@zzu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11775191, 61404115, 61434006, and 11475256), the Development Fund for Outstanding Young Teachers in Zhengzhou University of China (Grant No. 1521317004), and the Doctoral Student Overseas Study Program of Zhengzhou University, China.

摘要/Abstract

摘要：

The performance damage mechanism of InP-based high electron mobility transistors (HEMTs) after proton irradiation has been investigated comprehensively through induced defects. The effects of the defect type, defect energy level with respect to conduction band E_T, and defect concentration on the transfer and output characteristics of the device are discussed based on hydrodynamic model and Shockley-Read-Hall recombination model. The results indicate that only acceptor-like defects have a significant influence on device operation. Meanwhile, as defect energy level E_T shifts away from conduction band, the drain current decreases gradually and finally reaches a saturation value with E_T above 0.5 eV. This can be attributed to the fact that at sufficient deep level, acceptor-type defects could not be ionized any more. Additionally, the drain current and transconductance degrade more severely with larger acceptor concentration. These changes of the electrical characteristics with proton radiation could be accounted for by the electron density reduction in the channel region from induced acceptor-like defects.

关键词: InP-based high electron mobility transistor, proton radiation, defects properties, output and transfer characteristics

Abstract:

Key words: InP-based high electron mobility transistor, proton radiation, defects properties, output and transfer characteristics

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

73.61.Ey (III-V semiconductors) 14.20.Dh (Protons and neutrons)

孙树祥, 常明铭, 李梦珂, 马刘红, 钟英辉, 李玉晓, 丁芃, 金智, 魏志超. Effect of defects properties on InP-based high electron mobility transistors[J]. 中国物理B, 2019, 28(7): 78501-078501.

Shu-Xiang Sun(孙树祥), Ming-Ming Chang(常明铭), Meng-Ke Li(李梦珂), Liu-Hong Ma(马刘红), Ying-Hui Zhong(钟英辉), Yu-Xiao Li(李玉晓), Peng Ding(丁芃), Zhi Jin(金智), Zhi-Chao Wei(魏志超). Effect of defects properties on InP-based high electron mobility transistors[J]. Chin. Phys. B, 2019, 28(7): 78501-078501.

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Effect of defects properties on InP-based high electron mobility transistors

Effect of defects properties on InP-based high electron mobility transistors

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