A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure

doi:10.1088/1674-1056/23/12/124215

›› 2014, Vol. 23 ›› Issue (12): 124215-124215.doi: 10.1088/1674-1056/23/12/124215

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure

曹琛, 张冰, 吴龙胜, 李娜, 王俊峰

Xi'an Microelectronics Technology Institute, Xi'an 710071, China

收稿日期:2014-05-18 修回日期:2014-06-24 出版日期:2014-12-15 发布日期:2014-12-15
基金资助:
Project supported by the National Defense Pre-Research Foundation of China (Grant No. 51311050301095).

A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure

Cao Chen (曹琛), Zhang Bing (张冰), Wu Long-Sheng (吴龙胜), Li Na (李娜), Wang Jun-Feng (王俊峰)

Xi'an Microelectronics Technology Institute, Xi'an 710071, China

Received:2014-05-18 Revised:2014-06-24 Online:2014-12-15 Published:2014-12-15
Contact: Cao Chen E-mail:intercaochen@163.com
Supported by:
Project supported by the National Defense Pre-Research Foundation of China (Grant No. 51311050301095).

摘要/Abstract

摘要： A quantum efficiency analytical model for complementary metal–oxide–semiconductor (CMOS) image pixels with a pinned photodiode structure is developed. The proposed model takes account of the non-uniform doping distribution in the N-type region due to the impurity compensation formed by the actual fabricating process. The characteristics of two boundary PN junctions located in the N-type region for the particular spectral response of a pinned photodiode, are quantitatively analyzed. By solving the minority carrier steady-state diffusion equations and the barrier region photocurrent density equations successively, the analytical relationship between the quantum efficiency and the corresponding parameters such as incident wavelength, N-type width, peak doping concentration, and impurity density gradient of the N-type region is established. The validity of the model is verified by the measurement results with a test chip of 160× 160 pixels array, which provides the accurate process with a theoretical guidance for quantum efficiency design in pinned photodiode pixels.

关键词: CMOS image sensor, quantum efficiency, pinned photodiode, analytical model

Abstract: A quantum efficiency analytical model for complementary metal–oxide–semiconductor (CMOS) image pixels with a pinned photodiode structure is developed. The proposed model takes account of the non-uniform doping distribution in the N-type region due to the impurity compensation formed by the actual fabricating process. The characteristics of two boundary PN junctions located in the N-type region for the particular spectral response of a pinned photodiode, are quantitatively analyzed. By solving the minority carrier steady-state diffusion equations and the barrier region photocurrent density equations successively, the analytical relationship between the quantum efficiency and the corresponding parameters such as incident wavelength, N-type width, peak doping concentration, and impurity density gradient of the N-type region is established. The validity of the model is verified by the measurement results with a test chip of 160× 160 pixels array, which provides the accurate process with a theoretical guidance for quantum efficiency design in pinned photodiode pixels.

Key words: CMOS image sensor, quantum efficiency, pinned photodiode, analytical model

中图分类号: (Imaging detectors and sensors)

42.79.Pw

85.30.-z (Semiconductor devices) 78.40.Fy (Semiconductors)

曹琛, 张冰, 吴龙胜, 李娜, 王俊峰. A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure[J]. , 2014, 23(12): 124215-124215.

Cao Chen (曹琛), Zhang Bing (张冰), Wu Long-Sheng (吴龙胜), Li Na (李娜), Wang Jun-Feng (王俊峰). A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure[J]. Chin. Phys. B, 2014, 23(12): 124215-124215.

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A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure

A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure

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