中国物理B ›› 2013, Vol. 22 ›› Issue (2): 26802-026802.doi: 10.1088/1674-1056/22/2/026802
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
季莲a, 陆书龙a, 江德生b, 赵勇明a, 谭明a, 朱亚棋a, 董建荣a
Ji Lian (季莲)a, Lu Shu-Long (陆书龙)a, Jiang De-Sheng (江德生)b, Zhao Yong-Ming (赵勇明)a, Tan Ming (谭明)a, Zhu Ya-Qi (朱亚棋)a, Dong Jian-Rong (董建荣 )a
摘要: Single-junction, lattice-mismatched In0.69Ga0.31As thermophotovoltaic (TPV) devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition (MOCVD). Compositionally undulating step-graded InAsyP1-y buffer layers with a lattice mismatch of ~1.2%, are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate. With an optimized buffer thickness, the In0.69Ga0.31As active layers grown on the buffer displayed a high crystal quality with no measurable tetragonal distortion. High-performance single-junction devices are demonstrated, with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm2, which are measured under the standard solar simulator of air mass 1.5-global (AM 1.5 G).
中图分类号: (Semiconductors)