Transition of photoconductive and photovoltaic operation modes in amorphous Ga2O3-based solar-blind detectors tuned by oxygen vacancies

doi:10.1088/1674-1056/28/2/028501

中国物理B ›› 2019, Vol. 28 ›› Issue (2): 28501-028501.doi: 10.1088/1674-1056/28/2/028501

所属专题： SPECIAL TOPIC — Photodetector: Materials, physics, and applications

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Transition of photoconductive and photovoltaic operation modes in amorphous Ga₂O₃-based solar-blind detectors tuned by oxygen vacancies

Yan-Fang Zhang(张彦芳), Xuan-Hu Chen(陈选虎), Yang Xu(徐阳), Fang-Fang Ren(任芳芳), Shu-Lin Gu(顾书林), Rong Zhang(张荣), You-Dou Zheng(郑有炓), Jian-Dong Ye(叶建东)

1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 Wuxi Institute of Technology, Wuxi 214121, China;
3 Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, Nanjing University, Nanjing 210093, China

收稿日期:2018-10-28 修回日期:2018-12-10 出版日期:2019-02-05 发布日期:2019-02-05
通讯作者: Jian-Dong Ye E-mail:yejd@nju.edu.cn
基金资助:
Project supported by the National Key Research and Development Project, China (Grant No. 2017YFB0403003), the National Natural Science Foundation of China (Grant Nos. 61774081, 61322403, and 91850112), the State Key Research and Development Project of Jiangsu Province, China (Grant No. BE2018115), Shenzhen Fundamental Research Project, China (Grant Nos. 201773239 and 201888588), the Project of the State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices, China (Grant No. 2017KF001), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 021014380093 and 021014380085).

Transition of photoconductive and photovoltaic operation modes in amorphous Ga₂O₃-based solar-blind detectors tuned by oxygen vacancies

Yan-Fang Zhang(张彦芳)^1,2, Xuan-Hu Chen(陈选虎)¹, Yang Xu(徐阳)¹, Fang-Fang Ren(任芳芳)^1,3, Shu-Lin Gu(顾书林)^1,3, Rong Zhang(张荣)^1,3, You-Dou Zheng(郑有炓)^1,3, Jian-Dong Ye(叶建东)^1,3

1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 Wuxi Institute of Technology, Wuxi 214121, China;
3 Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, Nanjing University, Nanjing 210093, China

Received:2018-10-28 Revised:2018-12-10 Online:2019-02-05 Published:2019-02-05
Contact: Jian-Dong Ye E-mail:yejd@nju.edu.cn
Supported by:
Project supported by the National Key Research and Development Project, China (Grant No. 2017YFB0403003), the National Natural Science Foundation of China (Grant Nos. 61774081, 61322403, and 91850112), the State Key Research and Development Project of Jiangsu Province, China (Grant No. BE2018115), Shenzhen Fundamental Research Project, China (Grant Nos. 201773239 and 201888588), the Project of the State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices, China (Grant No. 2017KF001), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 021014380093 and 021014380085).

摘要/Abstract

摘要：

We report on the transition of photovoltaic and photoconductive operation modes of the amorphous Ga₂O₃-based solar-blind photodetectors in metal-semiconductor-metal (MSM) configurations. The conversion from Ohmic to Schottky contacts at Ti/Ga₂O₃ interface is realized by tuning the conductivity of amorphous Ga₂O₃ films with delicate control of oxygen flux in the sputtering process. The abundant donor-like oxygen vacancies distributed near the Ti/Ga₂O₃ interface fascinate the tunneling process across the barrier and result in the formation of Ohmic contacts. As a consequence, the serious sub-gap absorption and persistent photoconductivity (PPC) effect degrades the performance of the photoconductive detectors. In contrast, the photovoltaic device with a Schottky contact exhibits an ultra-low dark current less than 1 pA, a high detectivity of 9.82×10¹² cm·Hz^1/2·W^-1, a fast response time of 243.9 μs, and a high ultraviolet C (UVC)-to-ultraviolet A (UVA) rejection ratio of 10³. The promoting performance is attributed primarily to the reduction of the sub-gap states and the resultant suppression of PPC effect. With simple architecture, low fabrication cost, and easy fusion with modern high-speed integrated circuitry, these results provide a cost-effective way to realize high performance solar-blind photodetectors towards versatile practical applications.

关键词: amorphous gallium oxide, solar-blind photodetector, photovoltaic, photoconductive

Abstract:

Key words: amorphous gallium oxide, solar-blind photodetector, photovoltaic, photoconductive

中图分类号: (Optoelectronic devices)

85.60.-q

68.55.ag (Semiconductors) 73.40.Mr (Semiconductor-electrolyte contacts) 71.55.Ak (Metals, semimetals, and alloys)

张彦芳, 陈选虎, 徐阳, 任芳芳, 顾书林, 张荣, 郑有炓, 叶建东. Transition of photoconductive and photovoltaic operation modes in amorphous Ga₂O₃-based solar-blind detectors tuned by oxygen vacancies[J]. 中国物理B, 2019, 28(2): 28501-028501.

Yan-Fang Zhang(张彦芳), Xuan-Hu Chen(陈选虎), Yang Xu(徐阳), Fang-Fang Ren(任芳芳), Shu-Lin Gu(顾书林), Rong Zhang(张荣), You-Dou Zheng(郑有炓), Jian-Dong Ye(叶建东). Transition of photoconductive and photovoltaic operation modes in amorphous Ga₂O₃-based solar-blind detectors tuned by oxygen vacancies[J]. Chin. Phys. B, 2019, 28(2): 28501-028501.

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Transition of photoconductive and photovoltaic operation modes in amorphous Ga₂O₃-based solar-blind detectors tuned by oxygen vacancies

Transition of photoconductive and photovoltaic operation modes in amorphous Ga₂O₃-based solar-blind detectors tuned by oxygen vacancies

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