中国物理B ›› 2021, Vol. 30 ›› Issue (7): 76802-076802.doi: 10.1088/1674-1056/abf917

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Fabrication of GaAs/SiO2/Si and GaAs/Si heterointerfaces by surface-activated chemical bonding at room temperature

Rui Huang(黄瑞)1, Tian Lan(兰天)1, Chong Li(李冲)2, Jing Li(李景)1, and Zhiyong Wang(王智勇)1,†   

  1. 1 Institute of Advanced Technology on Semiconductor Optics & Electronics, Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China;
    2 College of Microelectronics, Beijing University of Technology, Beijing 100124, China
  • 收稿日期:2021-03-11 修回日期:2021-04-13 接受日期:2021-04-19 出版日期:2021-06-22 发布日期:2021-07-02
  • 通讯作者: Zhiyong Wang E-mail:zyw_bjut@126.com
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61505003 and 61674140), the Beijing Education Commission Project (Grant No. SQKM201610005008), and Beijing Postdoctoral Research Foundation (Grant No. 2020-Z2-043).

Fabrication of GaAs/SiO2/Si and GaAs/Si heterointerfaces by surface-activated chemical bonding at room temperature

Rui Huang(黄瑞)1, Tian Lan(兰天)1, Chong Li(李冲)2, Jing Li(李景)1, and Zhiyong Wang(王智勇)1,†   

  1. 1 Institute of Advanced Technology on Semiconductor Optics & Electronics, Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China;
    2 College of Microelectronics, Beijing University of Technology, Beijing 100124, China
  • Received:2021-03-11 Revised:2021-04-13 Accepted:2021-04-19 Online:2021-06-22 Published:2021-07-02
  • Contact: Zhiyong Wang E-mail:zyw_bjut@126.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61505003 and 61674140), the Beijing Education Commission Project (Grant No. SQKM201610005008), and Beijing Postdoctoral Research Foundation (Grant No. 2020-Z2-043).

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摘要： The room-temperature (RT) bonding mechanisms of GaAs/SiO2/Si and GaAs/Si heterointerfaces fabricated by surface-activated bonding (SAB) are investigated using a focused ion beam (FIB) system, cross-sectional scanning transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDX) and scanning acoustic microscopy (SAM). According to the element distribution detected by TEM and EDX, it is found that an intermixing process occurs among different atoms at the heterointerface during the RT bonding process following the surface-activation treatment. The diffusion of atoms at the interface is enhanced by the point defects introduced by the process of surface activation. We can confirm that through the point defects, a strong heterointerface can be created at RT. The measured bonding energies of GaAs/SiO2/Si and GaAs/Si wafers are 0.7 J/m2 and 0.6 J/m2. The surface-activation process can not only remove surface oxides and generate dangling bonds, but also enhance the atomic diffusivity at the interface.

关键词: surface-activation bonding, energy-dispersive x-ray spectroscopy, intermix, point defects

Abstract: The room-temperature (RT) bonding mechanisms of GaAs/SiO2/Si and GaAs/Si heterointerfaces fabricated by surface-activated bonding (SAB) are investigated using a focused ion beam (FIB) system, cross-sectional scanning transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDX) and scanning acoustic microscopy (SAM). According to the element distribution detected by TEM and EDX, it is found that an intermixing process occurs among different atoms at the heterointerface during the RT bonding process following the surface-activation treatment. The diffusion of atoms at the interface is enhanced by the point defects introduced by the process of surface activation. We can confirm that through the point defects, a strong heterointerface can be created at RT. The measured bonding energies of GaAs/SiO2/Si and GaAs/Si wafers are 0.7 J/m2 and 0.6 J/m2. The surface-activation process can not only remove surface oxides and generate dangling bonds, but also enhance the atomic diffusivity at the interface.

Key words: surface-activation bonding, energy-dispersive x-ray spectroscopy, intermix, point defects

中图分类号:  (Semiconductors)

  • 68.55.ag
81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation) 81.16.Rf (Micro- and nanoscale pattern formation)