中国物理B ›› 2017, Vol. 26 ›› Issue (3): 36801-036801.doi: 10.1088/1674-1056/26/3/036801

所属专题: TOPICAL REVIEW — 2D materials: physics and device applications

• TOPICAL REVIEW—2D materials: physics and device applications • 上一篇    下一篇

Photodetecting and light-emitting devices based on two-dimensional materials

Yuanfang Yu(于远方), Feng Miao(缪峰), Jun He(何军), Zhenhua Ni(倪振华)   

  1. 1 Department of Physics and Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 211189, China;
    2 National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
    3 CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
  • 收稿日期:2016-09-23 修回日期:2016-11-05 出版日期:2017-03-05 发布日期:2017-03-05
  • 通讯作者: Zhenhua Ni, Feng Miao, Jun He E-mail:zhni@seu.edu.cn;miao@nju.edu.cn;hej@nanoctr.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61422503 and 61376104), the Open Research Funds of Key Laboratory of MEMS of Ministry of Education of China, and the Fundamental Research Funds for the Central Universities of China.

Photodetecting and light-emitting devices based on two-dimensional materials

Yuanfang Yu(于远方)1, Feng Miao(缪峰)2, Jun He(何军)3, Zhenhua Ni(倪振华)1   

  1. 1 Department of Physics and Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 211189, China;
    2 National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
    3 CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
  • Received:2016-09-23 Revised:2016-11-05 Online:2017-03-05 Published:2017-03-05
  • Contact: Zhenhua Ni, Feng Miao, Jun He E-mail:zhni@seu.edu.cn;miao@nju.edu.cn;hej@nanoctr.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61422503 and 61376104), the Open Research Funds of Key Laboratory of MEMS of Ministry of Education of China, and the Fundamental Research Funds for the Central Universities of China.

摘要:

Two-dimensional (2D) materials, e.g., graphene, transition metal dichalcogenides (TMDs), and black phosphorus (BP), have demonstrated fascinating electrical and optical characteristics and exhibited great potential in optoelectronic applications. High-performance and multifunctional devices were achieved by employing diverse designs, such as hybrid systems with nanostructured materials, bulk semiconductors and organics, forming 2D heterostructures. In this review, we mainly discuss the recent progress of 2D materials in high-responsive photodetectors, light-emitting devices and single photon emitters. Hybrid systems and van der Waals heterostructure-based devices are emphasized, which exhibit great potential in state-of-the-art applications.

关键词: two-dimensional materials, photodetector, light emission, heterostructure

Abstract:

Two-dimensional (2D) materials, e.g., graphene, transition metal dichalcogenides (TMDs), and black phosphorus (BP), have demonstrated fascinating electrical and optical characteristics and exhibited great potential in optoelectronic applications. High-performance and multifunctional devices were achieved by employing diverse designs, such as hybrid systems with nanostructured materials, bulk semiconductors and organics, forming 2D heterostructures. In this review, we mainly discuss the recent progress of 2D materials in high-responsive photodetectors, light-emitting devices and single photon emitters. Hybrid systems and van der Waals heterostructure-based devices are emphasized, which exhibit great potential in state-of-the-art applications.

Key words: two-dimensional materials, photodetector, light emission, heterostructure

中图分类号:  (Semiconductors)

  • 68.55.ag
85.60.Gz (Photodetectors (including infrared and CCD detectors)) 78.60.Fi (Electroluminescence) 79.60.Jv (Interfaces; heterostructures; nanostructures)