In-plane oriented CH3NH3PbI3 nanowire suppression of the interface electron transfer to PCBM

doi:10.1088/1674-1056/abf4fa

中国物理B ›› 2021, Vol. 30 ›› Issue (6): 66801-066801.doi: 10.1088/1674-1056/abf4fa

In-plane oriented CH₃NH₃PbI₃ nanowire suppression of the interface electron transfer to PCBM

Tao Wang(王涛), Zhao-Hui Yu(于朝辉), Hao Huang(黄昊), Wei-Guang Kong(孔伟光), Wei Dang(党伟)^†, and Xiao-Hui Zhao(赵晓辉)^‡

Hebei Key Laboratory of Optic-Electronic Information Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China

收稿日期:2021-01-01 修回日期:2021-03-22 接受日期:2021-04-06 出版日期:2021-05-18 发布日期:2021-06-09
通讯作者: Wei Dang, Xiao-Hui Zhao E-mail:dangwei@hbu.edu.cn;xhzhao@hbu.edu.cn
基金资助:
Projected supported by the National Natural Science Foundation of China (Grant Nos. 21503066 and 61904048), the Fundamental Research Project from Shenzhen Science and Technology Innovation Committee (Grant No. JCYJ20180302174021198), the Natural Science Foundation of Hebei Province, China (Grant No. F2017201136), and the Foundation of Hebei Educational Committee (Grant No. ZC2016003).

In-plane oriented CH₃NH₃PbI₃ nanowire suppression of the interface electron transfer to PCBM

Tao Wang(王涛), Zhao-Hui Yu(于朝辉), Hao Huang(黄昊), Wei-Guang Kong(孔伟光), Wei Dang(党伟)^†, and Xiao-Hui Zhao(赵晓辉)^‡

Hebei Key Laboratory of Optic-Electronic Information Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China

Received:2021-01-01 Revised:2021-03-22 Accepted:2021-04-06 Online:2021-05-18 Published:2021-06-09
Contact: Wei Dang, Xiao-Hui Zhao E-mail:dangwei@hbu.edu.cn;xhzhao@hbu.edu.cn
Supported by:
Projected supported by the National Natural Science Foundation of China (Grant Nos. 21503066 and 61904048), the Fundamental Research Project from Shenzhen Science and Technology Innovation Committee (Grant No. JCYJ20180302174021198), the Natural Science Foundation of Hebei Province, China (Grant No. F2017201136), and the Foundation of Hebei Educational Committee (Grant No. ZC2016003).

摘要/Abstract

摘要： One-dimensional nanowire is an important candidate for lead-halide perovskite-based photonic detectors and solar cells. Its surface population, diameter, and growth direction, etc., are critical for device performance. In this research, we carried out a detailed study on electron transfer process at the interface of nanowire CH₃NH₃PbI₃(N-MAPbI₃)/Phenyl C61 butyric acid methyl-ester synonym (PCBM), as well as the interface of compact CH₃NH₃PbI₃(C-MAPbI₃)/PCBM by transient absorption spectroscopy. By comparing the carrier recombination dynamics of N-MAPbI₃, N-MAPbI₃/PCBM, C-MAPbI₃, and C-MAPbI₃/PCBM from picosecond (ps) to hundred nanosecond (ns) time scale, it is demonstrated that electron transfer at N-MAPbI₃/PCBM interface is less efficient than that at C-MAPbI₃/PCBM interface. In addition, electron transfer efficiency at C-MAPbI₃/PCBM interface was found to be excitation density-dependent, and it reduces with photo-generation carrier concentration increasing in a range from 1.0×10¹⁸ cm^-3-4.0×10¹⁸ cm^-3. Hot electron transfer, which leads to acceleration of electron transfer between the interfaces, was also visualized as carrier concentration increases from 1.0×10¹⁸ cm^-3-2.2×10¹⁸ cm^-3.

关键词: lead-halide perovskite, nanowire, interface electron transfer, transient absorption spectroscopy

Abstract: One-dimensional nanowire is an important candidate for lead-halide perovskite-based photonic detectors and solar cells. Its surface population, diameter, and growth direction, etc., are critical for device performance. In this research, we carried out a detailed study on electron transfer process at the interface of nanowire CH₃NH₃PbI₃(N-MAPbI₃)/Phenyl C61 butyric acid methyl-ester synonym (PCBM), as well as the interface of compact CH₃NH₃PbI₃(C-MAPbI₃)/PCBM by transient absorption spectroscopy. By comparing the carrier recombination dynamics of N-MAPbI₃, N-MAPbI₃/PCBM, C-MAPbI₃, and C-MAPbI₃/PCBM from picosecond (ps) to hundred nanosecond (ns) time scale, it is demonstrated that electron transfer at N-MAPbI₃/PCBM interface is less efficient than that at C-MAPbI₃/PCBM interface. In addition, electron transfer efficiency at C-MAPbI₃/PCBM interface was found to be excitation density-dependent, and it reduces with photo-generation carrier concentration increasing in a range from 1.0×10¹⁸ cm^-3-4.0×10¹⁸ cm^-3. Hot electron transfer, which leads to acceleration of electron transfer between the interfaces, was also visualized as carrier concentration increases from 1.0×10¹⁸ cm^-3-2.2×10¹⁸ cm^-3.

Key words: lead-halide perovskite, nanowire, interface electron transfer, transient absorption spectroscopy

中图分类号: (Amorphous semiconductors, glasses)

68.35.bj

68.55.ag (Semiconductors) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)

Tao Wang(王涛), Zhao-Hui Yu(于朝辉), Hao Huang(黄昊), Wei-Guang Kong(孔伟光), Wei Dang(党伟), and Xiao-Hui Zhao(赵晓辉). In-plane oriented CH₃NH₃PbI₃ nanowire suppression of the interface electron transfer to PCBM[J]. 中国物理B, 2021, 30(6): 66801-066801.

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In-plane oriented CH₃NH₃PbI₃ nanowire suppression of the interface electron transfer to PCBM

In-plane oriented CH₃NH₃PbI₃ nanowire suppression of the interface electron transfer to PCBM

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