中国物理B ›› 2021, Vol. 30 ›› Issue (4): 47303-.doi: 10.1088/1674-1056/abd397

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  • 收稿日期:2020-10-04 修回日期:2020-11-18 接受日期:2020-12-15 出版日期:2021-03-16 发布日期:2021-03-16

Digital and analog memory devices based on 2D layered MPS3 ( M=Mn, Co, Ni) materials

Guihua Zhao(赵贵华)1, Li Wang(王力)4, Xi Ke(柯曦)3,†, and Zhiyi Yu(虞志益)1,2,‡   

  1. 1 School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China;
    2 School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai 519082, China;
    3 School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China;
    4 School of Chemistry and Chemical Engineering, Neijiang Normal University, Neijiang 641100, China
  • Received:2020-10-04 Revised:2020-11-18 Accepted:2020-12-15 Online:2021-03-16 Published:2021-03-16
  • Contact: †Corresponding author. E-mail: kexi@gdut.edu.cn ‡Corresponding author. E-mail: yuzhiyi@mail.sysu.edu.cn
  • Supported by:
    Project supported by the National Key R&D Program of China (Grant Nos. 2017YFA0206200 and 2018YFB2202601) and the National Natural Science Foundation of China (Grant Nos. 61674173, 61834005, and 61902443).

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Abstract: We demonstrate digital and analog devices with an Ag/MPS3/Au structure based on layered MPS3 (M=Mn, Co, Ni) 2D materials. All devices show the bipolar behavior of resistive switching. In addition, Ag/MnPS3/Au and Ag/NiPS3/Au devices show synaptic characteristics of potentiation and depression. The digital and analog characteristics of resistance states enable Ag/MPS3/Au devices to work as both binary memory and artificial synapse devices. The Ag/MPS3/Au memory devices are promising for applications of flexible eye-like and brain-like systems on a chip when they are integrated with photodetectors and FETs composed of full MPS3 materials.

Key words: electrochemical metallization memory, memristor, 2D materials, neuromorphic computing

中图分类号:  (Electrical properties of specific thin films)

  • 73.61.-r
68.37.-d (Microscopy of surfaces, interfaces, and thin films) 68.55.ag (Semiconductors)