中国物理B ›› 2017, Vol. 26 ›› Issue (11): 116802-116802.doi: 10.1088/1674-1056/26/11/116802

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate

Lu Zhang(张璐), Hai-Yang Hong(洪海洋), Yi-Sen Wang(王一森), Cheng Li(李成), Guang-Yang Lin(林光杨), Song-Yan Chen(陈松岩), Wei Huang(黄巍), Jian-Yuan Wang(汪建元)   

  1. Department of Physics, OSED, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China
  • 收稿日期:2017-06-28 修回日期:2017-07-29 出版日期:2017-11-05 发布日期:2017-11-05
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 61474094) and the National Basic Research Program of China (Grant No. 2013CB632103).

Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate

Lu Zhang(张璐), Hai-Yang Hong(洪海洋), Yi-Sen Wang(王一森), Cheng Li(李成), Guang-Yang Lin(林光杨), Song-Yan Chen(陈松岩), Wei Huang(黄巍), Jian-Yuan Wang(汪建元)   

  1. Department of Physics, OSED, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China
  • Received:2017-06-28 Revised:2017-07-29 Online:2017-11-05 Published:2017-11-05
  • Contact: Cheng Li E-mail:lich@xmu.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 61474094) and the National Basic Research Program of China (Grant No. 2013CB632103).

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摘要：

Polycrystalline Ge1-xSnx (poly-Ge1-xSnx) alloy thin films with high Sn content (> 10%) were fabricated by co-sputtering amorphous GeSn (a-GeSn) on Ge (100) wafers and subsequently pulsed laser annealing with laser energy density in the range of 250 mJ/cm2 to 550 mJ/cm2. High quality poly-crystal Ge0.90Sn0.10 and Ge0.82Sn0.18 films with average grain sizes of 94 nm and 54 nm were obtained, respectively. Sn segregation at the grain boundaries makes Sn content in the poly-GeSn alloys slightly less than that in the corresponding primary a-GeSn. The crystalline grain size is reduced with the increase of the laser energy density or higher Sn content in the primary a-GeSn films due to the booming of nucleation numbers. The Raman peak shift of Ge-Ge mode in the poly crystalline GeSn can be attributed to Sn substitution, strain, and disorder. The dependence of Raman peak shift of the Ge-Ge mode caused by strain and disorder in GeSn films on full-width at half-maximum (FWHM) is well quantified by a linear relationship, which provides an effective method to evaluate the quality of poly-Ge1-xSnx by Raman spectra.

关键词: polycrystalline GeSn, high-Sn content, pulsed laser annealing, disorder

Abstract:

Polycrystalline Ge1-xSnx (poly-Ge1-xSnx) alloy thin films with high Sn content (> 10%) were fabricated by co-sputtering amorphous GeSn (a-GeSn) on Ge (100) wafers and subsequently pulsed laser annealing with laser energy density in the range of 250 mJ/cm2 to 550 mJ/cm2. High quality poly-crystal Ge0.90Sn0.10 and Ge0.82Sn0.18 films with average grain sizes of 94 nm and 54 nm were obtained, respectively. Sn segregation at the grain boundaries makes Sn content in the poly-GeSn alloys slightly less than that in the corresponding primary a-GeSn. The crystalline grain size is reduced with the increase of the laser energy density or higher Sn content in the primary a-GeSn films due to the booming of nucleation numbers. The Raman peak shift of Ge-Ge mode in the poly crystalline GeSn can be attributed to Sn substitution, strain, and disorder. The dependence of Raman peak shift of the Ge-Ge mode caused by strain and disorder in GeSn films on full-width at half-maximum (FWHM) is well quantified by a linear relationship, which provides an effective method to evaluate the quality of poly-Ge1-xSnx by Raman spectra.

Key words: polycrystalline GeSn, high-Sn content, pulsed laser annealing, disorder

中图分类号:  (Semiconductors)

  • 68.55.ag
61.66.Dk (Alloys ) 81.15.Fg (Pulsed laser ablation deposition) 74.62.En (Effects of disorder)