Ripening of single-layer InGaAs islands on GaAs(001)

doi:10.1088/1674-1056/22/2/026801

中国物理B ›› 2013, Vol. 22 ›› Issue (2): 26801-026801.doi: 10.1088/1674-1056/22/2/026801

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Ripening of single-layer InGaAs islands on GaAs(001)

刘珂^a, 周清^a, 周勋^{a b}, 郭祥^a, 罗子江^{a c}, 王继红^a, 胡明哲^a, 丁召^a

a College of Science, Guizhou University, Guiyang 550025, China;
b School of Physics and Electronics Science, Guizhou Normal University, Guiyang 550001, China;
c School of Education Administration, Guizhou University of Finance and Economics, Guiyang 550004, China

收稿日期:2012-06-19 修回日期:2012-08-23 出版日期:2013-01-01 发布日期:2013-01-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60866001 and 61076049); the Science and Technology Projects for Overseas Researchers of Guizhou Province (Grant No. (2007) 03); the Foundation of Guizhou Provincial Science and Technology Department (Grant No. QKH-J[2007]2176); the Special Assistant to High-Level Personnel Research Projects of Guizhou Provincial Committee, Organization Department (Grant No. TZJF-200610); the Doctorate Foundation of the Education Ministry of China (Grant No. 20105201110003); the Science and Technology Projects for Overseas Researchers of Guizhou Province (Grant No. Z103233); Special Governor Fund for Outstanding Professionals in Science & Technology and Education in Guizhou Province (Grant No. 2009114); and the Innovation Funds for Graduates of Guizhou University (Grant No. LG2012019).

Ripening of single-layer InGaAs islands on GaAs(001)

Liu Ke (刘珂)^a, Zhou Qing (周清)^a, Zhou Xun (周勋)^{a b}, Guo Xiang (郭祥)^a, Luo Zi-Jiang (罗子江)^{a c}, Wang Ji-Hong (王继红)^a, Hu Ming-Zhe (胡明哲)^a, Ding Zhao (丁召)^a

a College of Science, Guizhou University, Guiyang 550025, China;
b School of Physics and Electronics Science, Guizhou Normal University, Guiyang 550001, China;
c School of Education Administration, Guizhou University of Finance and Economics, Guiyang 550004, China

Received:2012-06-19 Revised:2012-08-23 Online:2013-01-01 Published:2013-01-01
Contact: Ding Zhao E-mail:zding@gzu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60866001 and 61076049); the Science and Technology Projects for Overseas Researchers of Guizhou Province (Grant No. (2007) 03); the Foundation of Guizhou Provincial Science and Technology Department (Grant No. QKH-J[2007]2176); the Special Assistant to High-Level Personnel Research Projects of Guizhou Provincial Committee, Organization Department (Grant No. TZJF-200610); the Doctorate Foundation of the Education Ministry of China (Grant No. 20105201110003); the Science and Technology Projects for Overseas Researchers of Guizhou Province (Grant No. Z103233); Special Governor Fund for Outstanding Professionals in Science & Technology and Education in Guizhou Province (Grant No. 2009114); and the Innovation Funds for Graduates of Guizhou University (Grant No. LG2012019).

摘要/Abstract

摘要： The present paper discusses our investigation of InGaAs surface morphology annealed for different lengths of time. After annealing for 15 min, the ripening of InGaAs islands is completed. The real space scanning tunneling microscopy (STM) images show the evolution of InGaAs surface morphology. A half-terrace diffusion theoretical model based on thermodynamic theory is proposed to estimate the annealing time for obtaining flat morphology. The annealing time calculated by the proposed theory is in agreement with the experimental results.

关键词: scanning tunneling microscopy, morphology of films, annealing, diffusion in nanoscale solids

Abstract: The present paper discusses our investigation of InGaAs surface morphology annealed for different lengths of time. After annealing for 15 min, the ripening of InGaAs islands is completed. The real space scanning tunneling microscopy (STM) images show the evolution of InGaAs surface morphology. A half-terrace diffusion theoretical model based on thermodynamic theory is proposed to estimate the annealing time for obtaining flat morphology. The annealing time calculated by the proposed theory is in agreement with the experimental results.

Key words: scanning tunneling microscopy, morphology of films, annealing, diffusion in nanoscale solids

中图分类号: (Scanning tunneling microscopy (including chemistry induced with STM))

68.37.Ef

68.55.J- (Morphology of films) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization) 66.30.Pa (Diffusion in nanoscale solids)

刘珂, 周清, 周勋, 郭祥, 罗子江, 王继红, 胡明哲, 丁召. Ripening of single-layer InGaAs islands on GaAs(001)[J]. 中国物理B, 2013, 22(2): 26801-026801.

Liu Ke (刘珂), Zhou Qing (周清), Zhou Xun (周勋), Guo Xiang (郭祥), Luo Zi-Jiang (罗子江), Wang Ji-Hong (王继红), Hu Ming-Zhe (胡明哲), Ding Zhao (丁召). Ripening of single-layer InGaAs islands on GaAs(001)[J]. Chin. Phys. B, 2013, 22(2): 26801-026801.

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Ripening of single-layer InGaAs islands on GaAs(001)

Ripening of single-layer InGaAs islands on GaAs(001)

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