中国物理B ›› 2013, Vol. 22 ›› Issue (11): 117311-117311.doi: 10.1088/1674-1056/22/11/117311
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
张月a b, 蒲石a b, 雷晓艺a b, 陈庆a b, 马晓华b c, 郝跃b
Zhang Yue (张月)a b, Pu Shi (蒲石)a b, Lei Xiao-Yi (雷晓艺)a b, Chen Qing (陈庆)a b, Ma Xiao-Hua (马晓华)b c, Hao Yue (郝跃)b
摘要: The exponent n of the generation of an interface trap (Nit), which contributes to the power-law negative bias temperature instability (NBTI) degradation, and the exponent’s time evolution are investigated by simulations with varying the stress voltage Vg and temperature T. It is found that the exponent n in the diffusion-limited phase of the degradation process is irrelevant to both Vg and T. The time evolution of the exponent n is affected by the stress conditions, which is reflected in the shift of the onset of the diffusion-limited phase. According to the diffusion profiles, the generation of the atomic hydrogen species, which is equal to the buildup of Nit, is strongly correlated with the stress conditions, whereas the diffusion of the hydrogen species shows Vg-unaffected but T-affected relations through the normalized results.
中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))