中国物理B ›› 2013, Vol. 22 ›› Issue (11): 117311-117311.doi: 10.1088/1674-1056/22/11/117311

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effects of stress conditions on the generation of negative bias temperature instability-associated interface traps

张月a b, 蒲石a b, 雷晓艺a b, 陈庆a b, 马晓华b c, 郝跃b   

  1. a School of Microelectronics, Xidian University, Xi’an 710071, China;
    b State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, Key Laboratory of WideBandgap Semiconductor Materials and Devices of Ministry of Education, Xi’an 710071, China;
    c School of Technical Physics, Xidian University, Xi’an 710071, China
  • 收稿日期:2013-03-08 修回日期:2013-04-09 出版日期:2013-09-28 发布日期:2013-09-28
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant No. K50511250008).

Effects of stress conditions on the generation of negative bias temperature instability-associated interface traps

Zhang Yue (张月)a b, Pu Shi (蒲石)a b, Lei Xiao-Yi (雷晓艺)a b, Chen Qing (陈庆)a b, Ma Xiao-Hua (马晓华)b c, Hao Yue (郝跃)b   

  1. a School of Microelectronics, Xidian University, Xi’an 710071, China;
    b State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, Key Laboratory of WideBandgap Semiconductor Materials and Devices of Ministry of Education, Xi’an 710071, China;
    c School of Technical Physics, Xidian University, Xi’an 710071, China
  • Received:2013-03-08 Revised:2013-04-09 Online:2013-09-28 Published:2013-09-28
  • Contact: Zhang Yue E-mail:zhangy@mail.xidian.edu.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant No. K50511250008).

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摘要： The exponent n of the generation of an interface trap (Nit), which contributes to the power-law negative bias temperature instability (NBTI) degradation, and the exponent’s time evolution are investigated by simulations with varying the stress voltage Vg and temperature T. It is found that the exponent n in the diffusion-limited phase of the degradation process is irrelevant to both Vg and T. The time evolution of the exponent n is affected by the stress conditions, which is reflected in the shift of the onset of the diffusion-limited phase. According to the diffusion profiles, the generation of the atomic hydrogen species, which is equal to the buildup of Nit, is strongly correlated with the stress conditions, whereas the diffusion of the hydrogen species shows Vg-unaffected but T-affected relations through the normalized results.

关键词: negative bias temperature instability, reaction–diffusion model, interface trap

Abstract: The exponent n of the generation of an interface trap (Nit), which contributes to the power-law negative bias temperature instability (NBTI) degradation, and the exponent’s time evolution are investigated by simulations with varying the stress voltage Vg and temperature T. It is found that the exponent n in the diffusion-limited phase of the degradation process is irrelevant to both Vg and T. The time evolution of the exponent n is affected by the stress conditions, which is reflected in the shift of the onset of the diffusion-limited phase. According to the diffusion profiles, the generation of the atomic hydrogen species, which is equal to the buildup of Nit, is strongly correlated with the stress conditions, whereas the diffusion of the hydrogen species shows Vg-unaffected but T-affected relations through the normalized results.

Key words: negative bias temperature instability, reaction–diffusion model, interface trap

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
85.30.Tv (Field effect devices)