Interfacial and electrical characteristics of a HfO2/n-InAlAs MOS-capacitor with different dielectric thicknesses

doi:10.1088/1674-1056/24/12/126701

中国物理B ›› 2015, Vol. 24 ›› Issue (12): 126701-126701.doi: 10.1088/1674-1056/24/12/126701

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Interfacial and electrical characteristics of a HfO₂/n-InAlAs MOS-capacitor with different dielectric thicknesses

关赫, 吕红亮, 郭辉, 张义门, 张玉明, 武利翻

Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2015-06-08 修回日期:2015-07-30 出版日期:2015-12-05 发布日期:2015-12-05
通讯作者: Guo Hui E-mail:Guohui@mail.xidian.edu.cn
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2010CB327505) and the Advance Research Foundation of China (Grant No. 914xxx803-051xxx111).

Interfacial and electrical characteristics of a HfO₂/n-InAlAs MOS-capacitor with different dielectric thicknesses

Guan He (关赫), Lv Hong-Liang (吕红亮), Guo Hui (郭辉), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Wu Li-Fan (武利翻)

Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2015-06-08 Revised:2015-07-30 Online:2015-12-05 Published:2015-12-05
Contact: Guo Hui E-mail:Guohui@mail.xidian.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2010CB327505) and the Advance Research Foundation of China (Grant No. 914xxx803-051xxx111).

摘要/Abstract

摘要： A HfO₂/n-InAlAs MOS-capacitor has the advantage of reducing the serious gate leakage current when it is adopted in InAs/AlSb HEMT instead of the conventional Schottky-gate. In this paper, three kinds of HfO₂/n-InAlAs MOS-capacitor samples with different HfO₂ thickness values of 6, 8, and 10 nm are fabricated and used to investigate the interfacial and electrical characteristics. As the thickness is increased, the equivalent dielectric constant ε _ox of HfO₂ layer is enhanced and the InAlAs-HfO₂ interface trap density D_it is reduced, leading to an effective reduction of the leakage current. It is found that the HfO₂ thickness of 10 nm is a suitable value to satisfy the demands of most applications of a HfO₂/n-InAlAs MOS-capacitor, with a sufficiently low leakage current compromised with the threshold voltage.

关键词: HfO₂/n-InAlAs MOS-capacitor, high-k gate dielectric, interface trap density, leakage current

Abstract: A HfO₂/n-InAlAs MOS-capacitor has the advantage of reducing the serious gate leakage current when it is adopted in InAs/AlSb HEMT instead of the conventional Schottky-gate. In this paper, three kinds of HfO₂/n-InAlAs MOS-capacitor samples with different HfO₂ thickness values of 6, 8, and 10 nm are fabricated and used to investigate the interfacial and electrical characteristics. As the thickness is increased, the equivalent dielectric constant ε _ox of HfO₂ layer is enhanced and the InAlAs-HfO₂ interface trap density D_it is reduced, leading to an effective reduction of the leakage current. It is found that the HfO₂ thickness of 10 nm is a suitable value to satisfy the demands of most applications of a HfO₂/n-InAlAs MOS-capacitor, with a sufficiently low leakage current compromised with the threshold voltage.

Key words: HfO₂/n-InAlAs MOS-capacitor, high-k gate dielectric, interface trap density, leakage current

中图分类号: (Interfaces)

67.30.hp

68.37.-d (Microscopy of surfaces, interfaces, and thin films) 61.72.uj (III-V and II-VI semiconductors)

关赫, 吕红亮, 郭辉, 张义门, 张玉明, 武利翻. Interfacial and electrical characteristics of a HfO₂/n-InAlAs MOS-capacitor with different dielectric thicknesses[J]. 中国物理B, 2015, 24(12): 126701-126701.

Guan He (关赫), Lv Hong-Liang (吕红亮), Guo Hui (郭辉), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Wu Li-Fan (武利翻). Interfacial and electrical characteristics of a HfO₂/n-InAlAs MOS-capacitor with different dielectric thicknesses[J]. Chin. Phys. B, 2015, 24(12): 126701-126701.

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Interfacial and electrical characteristics of a HfO₂/n-InAlAs MOS-capacitor with different dielectric thicknesses

Interfacial and electrical characteristics of a HfO₂/n-InAlAs MOS-capacitor with different dielectric thicknesses

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