中国物理B ›› 2012, Vol. 21 ›› Issue (7): 78502-078502.doi: 10.1088/1674-1056/21/7/078502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS

胡夏融, 张波, 罗小蓉, 王元刚, 雷天飞, 李肇基   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2011-12-01 修回日期:2011-12-27 出版日期:2012-06-01 发布日期:2012-06-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61176069 and 60976060) and the National Key Laboratory of Analogue Integrated Circuit, China (Grant No. 9140C090304110C0905).

A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS

Hu Xia-Rong(胡夏融)†, Zhang Bo(张波), Luo Xiao-Rong(罗小蓉), Wang Yuan-Gang(王元刚), Lei Tian-Fei(雷天飞), and Li Zhao-Ji(李肇基)   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2011-12-01 Revised:2011-12-27 Online:2012-06-01 Published:2012-06-01
  • Contact: Hu Xia-Rong E-mail:h1_x2_r3@126.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61176069 and 60976060) and the National Key Laboratory of Analogue Integrated Circuit, China (Grant No. 9140C090304110C0905).

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摘要： A new analytical model for the surface electric field distribution and breakdown voltage of the silicon on insulator (SOI) trench lateral double-diffused metal-oxide-semiconductor (LDMOS) is presented. Based on the two-dimensional Laplace solution and Poisson solution, the model considers the influence of structure parameters, such as the doping concentration of the drift region and the depth and width of the trench, on the surface electric field. Further, a simple analytical expression of the breakdown voltage is obtained, which offers an effective way to gain an optimal high voltage. All analytical results are in good agreement with the simulation results.

关键词: silicon on insulator (SOI), trench, lateral double-diffused metal-oxide-semiconductor (LDMOS), breakdown voltage

Abstract: A new analytical model for the surface electric field distribution and breakdown voltage of the silicon on insulator (SOI) trench lateral double-diffused metal-oxide-semiconductor (LDMOS) is presented. Based on the two-dimensional Laplace solution and Poisson solution, the model considers the influence of structure parameters, such as the doping concentration of the drift region and the depth and width of the trench, on the surface electric field. Further, a simple analytical expression of the breakdown voltage is obtained, which offers an effective way to gain an optimal high voltage. All analytical results are in good agreement with the simulation results.

Key words: silicon on insulator (SOI), trench, lateral double-diffused metal-oxide-semiconductor (LDMOS), breakdown voltage

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.30.Tv (Field effect devices)