中国物理B ›› 2012, Vol. 21 ›› Issue (6): 67304-067304.doi: 10.1088/1674-1056/21/6/067304
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
肖文波a, 何兴道a, 张志敏a, 高益庆a, 刘江涛b
Xiao Wen-Bo(肖文波)a)†, He Xing-Dao(何兴道)a), Zhang Zhi-Min(张志敏)a), Gao Yi-Qing(高益庆)a), and Liu Jiang-Tao(刘江涛)b)
摘要: At room temperature, the bias dependence of a far-infrared electroluminescence image of a photodiode is investigated in the dark condition. The results show that the electroluminescence image can be used to detect defects in the photodiode. Additionally, it is found that the electroluminescence intensity has a power law dependence on the dc bias current. The photodiode ideality factor could be obtained by a fitting a relationship between the electroluminescence intensity and the bias current. The device defect levels will be easily determined according to the infrared image and the extracted ideality factor value. This work is of guiding significance for current solar cell testing and research.
中图分类号: (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)