中国物理B ›› 2012, Vol. 21 ›› Issue (6): 67304-067304.doi: 10.1088/1674-1056/21/6/067304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Far-infrared electroluminescence characteristics of an Si-based photodiode under a forward DC bias current

肖文波a, 何兴道a, 张志敏a, 高益庆a, 刘江涛b   

  1. a. Key Laboratory of Nondestructive Test (Ministry of Education),Nanchang Hangkong University, Nanchang 330063, China;
    b. Department of Physics, Nanchang University, Nanchang 330031, China
  • 收稿日期:2011-11-08 修回日期:2011-12-07 出版日期:2012-05-01 发布日期:2012-05-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10904059, 41066001, 61072131, 61177096), Aeronautical Science Foundation of China (Grant No. 2010ZB56004), the Scientific Research Foundation of Jiangxi Provincial Department of Education, China (Grant No. GJJ11176), the Open Fund of the Key Laboratory of Nondestructive Testing (Ministry of Education, Nanchang Hangkong University) (Grant No. ZD201029005), the Natural Science Foundation of Jiangxi Province, China (Grant No. 2009GZW0024), and the Graduate Innovation Base of Jiangxi Province, China.

Far-infrared electroluminescence characteristics of an Si-based photodiode under a forward DC bias current

Xiao Wen-Bo(肖文波)a)†, He Xing-Dao(何兴道)a), Zhang Zhi-Min(张志敏)a), Gao Yi-Qing(高益庆)a), and Liu Jiang-Tao(刘江涛)b)   

  1. a. Key Laboratory of Nondestructive Test (Ministry of Education),Nanchang Hangkong University, Nanchang 330063, China;
    b. Department of Physics, Nanchang University, Nanchang 330031, China
  • Received:2011-11-08 Revised:2011-12-07 Online:2012-05-01 Published:2012-05-01
  • Contact: Xiao Wen-Bo E-mail:xiaowenbo1570@163.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10904059, 41066001, 61072131, 61177096), Aeronautical Science Foundation of China (Grant No. 2010ZB56004), the Scientific Research Foundation of Jiangxi Provincial Department of Education, China (Grant No. GJJ11176), the Open Fund of the Key Laboratory of Nondestructive Testing (Ministry of Education, Nanchang Hangkong University) (Grant No. ZD201029005), the Natural Science Foundation of Jiangxi Province, China (Grant No. 2009GZW0024), and the Graduate Innovation Base of Jiangxi Province, China.

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摘要： At room temperature, the bias dependence of a far-infrared electroluminescence image of a photodiode is investigated in the dark condition. The results show that the electroluminescence image can be used to detect defects in the photodiode. Additionally, it is found that the electroluminescence intensity has a power law dependence on the dc bias current. The photodiode ideality factor could be obtained by a fitting a relationship between the electroluminescence intensity and the bias current. The device defect levels will be easily determined according to the infrared image and the extracted ideality factor value. This work is of guiding significance for current solar cell testing and research.

关键词: photodiode, electroluminescence images, electroluminescence intensity

Abstract: At room temperature, the bias dependence of a far-infrared electroluminescence image of a photodiode is investigated in the dark condition. The results show that the electroluminescence image can be used to detect defects in the photodiode. Additionally, it is found that the electroluminescence intensity has a power law dependence on the dc bias current. The photodiode ideality factor could be obtained by a fitting a relationship between the electroluminescence intensity and the bias current. The device defect levels will be easily determined according to the infrared image and the extracted ideality factor value. This work is of guiding significance for current solar cell testing and research.

Key words: photodiode, electroluminescence images, electroluminescence intensity

中图分类号:  (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Lq
78.60.Fi (Electroluminescence) 42.87.-d (Optical testing techniques)