中国物理B ›› 2017, Vol. 26 ›› Issue (8): 87307-087307.doi: 10.1088/1674-1056/26/8/087307

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow

Bin Li(黎斌), Shan-Jin Huang(黄善津), Hai-Long Wang(王海龙), Hua-Long Wu(吴华龙), Zhi-Sheng Wu(吴志盛), Gang Wang(王钢), Hao Jiang(江灏)   

  1. 1 State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
    2 School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China;
    3 The Open University of Guangdong & Guangdong Polytechnic Institute, Guangzhou 510091, China
  • 收稿日期:2017-01-19 修回日期:2017-04-17 出版日期:2017-08-05 发布日期:2017-08-05
  • 通讯作者: Hao Jiang E-mail:stsjiang@mail.sysu.edu.cn
  • 基金资助:

    Project supported by the Science and Technology Major Project of Guangdong Province, China (Grant Nos. 2014B010119003 and 2015B010112001).

Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow

Bin Li(黎斌)2,3, Shan-Jin Huang(黄善津)2, Hai-Long Wang(王海龙)2, Hua-Long Wu(吴华龙)2, Zhi-Sheng Wu(吴志盛)1, Gang Wang(王钢)1, Hao Jiang(江灏)1   

  1. 1 State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
    2 School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China;
    3 The Open University of Guangdong & Guangdong Polytechnic Institute, Guangzhou 510091, China
  • Received:2017-01-19 Revised:2017-04-17 Online:2017-08-05 Published:2017-08-05
  • Contact: Hao Jiang E-mail:stsjiang@mail.sysu.edu.cn
  • About author:0.1088/1674-1056/26/8/
  • Supported by:

    Project supported by the Science and Technology Major Project of Guangdong Province, China (Grant Nos. 2014B010119003 and 2015B010112001).

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摘要：

The performance of an InGaN/GaN multiple quantum well (MQW) based visible-light Schottky photodiode (PD) is improved by optimizing the source flow of TEGa during InGaN QW growth. The samples with five-pair InGaN/GaN MQWs are grown on sapphire substrates by metal organic chemical vapor deposition. From the fabricated Schottky-barrier PDs, it is found that the smaller the TEGa flow, the lower the reverse-bias leakage is. The photocurrent can also be enhanced by depositing the InGaN QWs with using lower TEGa flow. A high responsivity of 1.94 A/W is obtained at 470 nm and -3-V bias in the PD grown with optimized TEGa flow. Analysis results show that the lower TEGa flow used for depositing InGaN may lead to superior crystalline quality with improved InGaN/GaN interface, and less structural defects related non-radiative recombination centers formed in the MQWs.

关键词: visible-light photodiodes, quantum wells, triethylgallium, oxidized iridium

Abstract:

The performance of an InGaN/GaN multiple quantum well (MQW) based visible-light Schottky photodiode (PD) is improved by optimizing the source flow of TEGa during InGaN QW growth. The samples with five-pair InGaN/GaN MQWs are grown on sapphire substrates by metal organic chemical vapor deposition. From the fabricated Schottky-barrier PDs, it is found that the smaller the TEGa flow, the lower the reverse-bias leakage is. The photocurrent can also be enhanced by depositing the InGaN QWs with using lower TEGa flow. A high responsivity of 1.94 A/W is obtained at 470 nm and -3-V bias in the PD grown with optimized TEGa flow. Analysis results show that the lower TEGa flow used for depositing InGaN may lead to superior crystalline quality with improved InGaN/GaN interface, and less structural defects related non-radiative recombination centers formed in the MQWs.

Key words: visible-light photodiodes, quantum wells, triethylgallium, oxidized iridium

中图分类号:  (Photoconduction and photovoltaic effects)

  • 73.50.Pz
73.61.Ey (III-V semiconductors) 78.66.Fd (III-V semiconductors)