中国物理B ›› 2019, Vol. 28 ›› Issue (9): 98503-098503.doi: 10.1088/1674-1056/ab343f

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses

Xiaolong Cai(蔡小龙), Dong Zhou(周东), Liang Cheng(程亮), Fangfang Ren(任芳芳), Hong Zhong(钟宏), Rong Zhang(张荣), Youdou Zheng(郑有炓), Hai Lu(陆海)   

  1. 1 School of Electronic Science and Engineering, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;
    2 Technology Planning Department, State Key Laboratory of Mobile Network and Mobile Multimedia Technology, ZTE Corporation, Nanjing 210012, China
  • 收稿日期:2019-04-10 修回日期:2019-06-25 出版日期:2019-09-05 发布日期:2019-09-05
  • 通讯作者: Hai Lu E-mail:hailu@nju.edu.cn
  • 基金资助:

    Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400902) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China.

Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses

Xiaolong Cai(蔡小龙)1,2, Dong Zhou(周东)1, Liang Cheng(程亮)1, Fangfang Ren(任芳芳)1, Hong Zhong(钟宏)2, Rong Zhang(张荣)1, Youdou Zheng(郑有炓)1, Hai Lu(陆海)1   

  1. 1 School of Electronic Science and Engineering, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;
    2 Technology Planning Department, State Key Laboratory of Mobile Network and Mobile Multimedia Technology, ZTE Corporation, Nanjing 210012, China
  • Received:2019-04-10 Revised:2019-06-25 Online:2019-09-05 Published:2019-09-05
  • Contact: Hai Lu E-mail:hailu@nju.edu.cn
  • Supported by:

    Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400902) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China.

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摘要：

Four 4H-SiC p-i-n ultraviolet (UV) avalanche photodiode (APD) samples PIN-0.1, PIN-0.35, PIN-0.5, and PIN-1.0 with different intrinsic layer thicknesses (0.1 μm, 0.35 μm, 0.5 μm, and 1.0 μm, respectively) are designed and fabricated. Single photon detection efficiency (SPDE) performance becomes better as the intrinsic layer thickness increases, which is attributed to the inhibitation of tunneling. Dark count origin is also investigated, an activation energy as small as 0.22 eV of the dark count rate (DCR) confirms that the trap-assisted tunneling (TAT) process is the main source of DCR. The temperature coefficient ranges from -2.6 mV/℃ to 18.3 mV/℃, demonstrating that the TAT process is dominant in APDs with thinner intrinsic layers. Additionally, the room temperature maximum quantum efficiency at 280 nm differs from 48% to 65% for PIN-0.35, PIN-0.5, and PIN-1.0 under 0 V bias, and UV/visible rejection ratios higher than 104 are obtained.

关键词: 4H-SiC, avalanche photodiode, single photon detection efficiency, tunneling

Abstract:

Four 4H-SiC p-i-n ultraviolet (UV) avalanche photodiode (APD) samples PIN-0.1, PIN-0.35, PIN-0.5, and PIN-1.0 with different intrinsic layer thicknesses (0.1 μm, 0.35 μm, 0.5 μm, and 1.0 μm, respectively) are designed and fabricated. Single photon detection efficiency (SPDE) performance becomes better as the intrinsic layer thickness increases, which is attributed to the inhibitation of tunneling. Dark count origin is also investigated, an activation energy as small as 0.22 eV of the dark count rate (DCR) confirms that the trap-assisted tunneling (TAT) process is the main source of DCR. The temperature coefficient ranges from -2.6 mV/℃ to 18.3 mV/℃, demonstrating that the TAT process is dominant in APDs with thinner intrinsic layers. Additionally, the room temperature maximum quantum efficiency at 280 nm differs from 48% to 65% for PIN-0.35, PIN-0.5, and PIN-1.0 under 0 V bias, and UV/visible rejection ratios higher than 104 are obtained.

Key words: 4H-SiC, avalanche photodiode, single photon detection efficiency, tunneling

中图分类号:  (Semiconductor devices)

  • 85.30.-z
85.30.De (Semiconductor-device characterization, design, and modeling)