Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure

doi:10.1088/1674-1056/ab90f1

中国物理B ›› 2020, Vol. 29 ›› Issue (8): 88502-088502.doi: 10.1088/1674-1056/ab90f1

• SPECIAL TOPIC—Ultracold atom and its application in precision measurement • 上一篇下一篇

Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure

Ke-Xiu Dong(董可秀), Dun-Jun Chen(陈敦军), Qing Cai(蔡青), Yan-Li liu(刘燕丽), Yu-Jie Wang(王玉杰)

1 School of Mechanical and Electrical Engineering, Chuzhou University, Chuzhou 239000, China;
2 Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
3 School of Information and Electronic Engineering, Shandong Technology and Business University, Yantai 264005, China

收稿日期:2020-03-01 修回日期:2020-04-19 出版日期:2020-08-05 发布日期:2020-08-05
通讯作者: Dun-Jun Chen E-mail:djchen@nju.edu.cn
基金资助:
Project supported by the Natural Science Research Project of Anhui University, China (Grant No. KJ2019A0644), the National Natural Science Foundation of China (Grant Nos. 61634002 and 61804089), the Natural Science Alliance Foundation, China (Grant No. U1830109), the Natural Science Foundation of Anhui Province, China (Grant No. 1708085MF149), the Chuzhou University Research Project, China (Grant No. zrjz2019002), and the Project of the Higher Educational and Technology Program of Shandong Province, China (Grant No. J16LN04).

Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure

Ke-Xiu Dong(董可秀)¹, Dun-Jun Chen(陈敦军)², Qing Cai(蔡青)², Yan-Li liu(刘燕丽)³, Yu-Jie Wang(王玉杰)¹

1 School of Mechanical and Electrical Engineering, Chuzhou University, Chuzhou 239000, China;
2 Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
3 School of Information and Electronic Engineering, Shandong Technology and Business University, Yantai 264005, China

Received:2020-03-01 Revised:2020-04-19 Online:2020-08-05 Published:2020-08-05
Contact: Dun-Jun Chen E-mail:djchen@nju.edu.cn
Supported by:
Project supported by the Natural Science Research Project of Anhui University, China (Grant No. KJ2019A0644), the National Natural Science Foundation of China (Grant Nos. 61634002 and 61804089), the Natural Science Alliance Foundation, China (Grant No. U1830109), the Natural Science Foundation of Anhui Province, China (Grant No. 1708085MF149), the Chuzhou University Research Project, China (Grant No. zrjz2019002), and the Project of the Higher Educational and Technology Program of Shandong Province, China (Grant No. J16LN04).

摘要/Abstract

摘要： To suppress the electric field crowding at sidewall and improve the detection sensitivity of the AlGaN separate absorption and multiplication (SAM) avalanche photodiodes (APDs), we propose the new AlGaN APDs structure combining a large-area mesa with a field plate (FP). The simulated results show that the proposed AlGaN APDs exhibit a significant increase in avalanche gain, about two orders of magnitude, compared to their counterparts without FP structure, which is attributed to the suppression of electric field crowding at sidewall of multiplication layer and the reduction of the maximum electric field at the p-type GaN sidewall in p-n depletion region. Meanwhile, the APDs can produce an obviously enhanced photocurrent due to the increase in cross sectional area of multiplication region.

关键词: AlGaN, avalanche photodiodes, mesa, field plate

Abstract: To suppress the electric field crowding at sidewall and improve the detection sensitivity of the AlGaN separate absorption and multiplication (SAM) avalanche photodiodes (APDs), we propose the new AlGaN APDs structure combining a large-area mesa with a field plate (FP). The simulated results show that the proposed AlGaN APDs exhibit a significant increase in avalanche gain, about two orders of magnitude, compared to their counterparts without FP structure, which is attributed to the suppression of electric field crowding at sidewall of multiplication layer and the reduction of the maximum electric field at the p-type GaN sidewall in p-n depletion region. Meanwhile, the APDs can produce an obviously enhanced photocurrent due to the increase in cross sectional area of multiplication region.

Key words: AlGaN, avalanche photodiodes, mesa, field plate

中图分类号: (Photodiodes; phototransistors; photoresistors)

85.60.Dw

85.60.Bt (Optoelectronic device characterization, design, and modeling)

董可秀, 陈敦军, 蔡青, 刘燕丽, 王玉杰. Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure[J]. 中国物理B, 2020, 29(8): 88502-088502.

Ke-Xiu Dong(董可秀), Dun-Jun Chen(陈敦军), Qing Cai(蔡青), Yan-Li liu(刘燕丽), Yu-Jie Wang(王玉杰). Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure[J]. Chin. Phys. B, 2020, 29(8): 88502-088502.

参考文献 16

[1]	Cai Q, Luo W K, Li Q, Li M, Chen D J, Lu H, Zhang R and Zheng Y D 2018 Appl. Phys. Lett. 113 123503 doi: 10.1063/1.5049621
[2]	Huang Y, Chen D J, Lu H, Dong K X, Zhang R, Zheng Y D, Li L and Li Z H 2012 Appl. Phys. Lett. 101 253516 doi: 10.1063/1.4772984
[3]	Tang Y, Cai Q, Yang L H, Dong K X, Chen D J, Lu H, Zhang R and Zheng Y D 2017 Chin. Phys. B 26 038503 doi: 10.1088/1674-1056/26/3/038503
[4]	Kizilyalli I C, Prunty T and Aktas O 2015 IEEE Electron Dev. Lett. 36 1073 doi: 10.1109/LED.2015.2474817
[5]	Reddy P, Breckenridge M H, Klump A, Guo Q, Mita S, Sarkar B, Kirste R, Moody B, Tweedie J, Collazo R and Sitar Z 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) p. 1
[6]	Pham T T T, Shin H, Chong E and Cha H Y 2018 J. Semicond. Sci. Technol. 18 645 doi: 10.5573/JSTS.2018.18.5.645
[7]	Cha H Y 2010 J. Korean Phys. Soc. 56 672 doi: 10.3938/jkps.56.672
[8]	Akiyama S, Kondo M, Wada L and Horio K 2019 Jpn. J. Appl. Phys. 58 068003 doi: 10.7567/1347-4065/ab1e8f
[9]	Mao W, Fan J S, Du M, Zhang J F, Zheng X F, Wang C, Ma X H, Zhang J C and Hao Y 2016 Chin. Phys. B 25 127305 doi: 10.1088/1674-1056/25/12/127305
[10]	Wang X D, Hu W D, Pan M, Hou L W, Xie W, Xu J T, Li X Y, Chen X S and Lu W 2014 J. Appl. Phys. 115 013103 doi: 10.1063/1.4861148
[11]	Dong K X, Chen D J, Lu H, Liu B, Han P, Zhang R and Zheng Y D 2013 IEEE Photon. Technol. Lett. 25 1510 doi: 10.1109/LPT.2013.2267538
[12]	Liu Y L, Wang W, Dong Y, Chen D J, Zhang R and Zheng Y D 2019 Acta Phys. Sin. 68 247203(in Chinese)
[13]	McClintock R, Yasan A, Minder K, Kung P and Razeghi M 2005 Appl. Phys. Lett. 87 241123 doi: 10.1063/1.2140610
[14]	Sun L, Chen J, Li J and Jiang H 2010 Appl. Phys. Lett. 97 191103 doi: 10.1063/1.3515903
[15]	Shao Z G, Chen D J, Lu H, Zhang R, Cao D P, Luo W J, Zheng Y D, Li L and Li Z H 2014 IEEE Electron Dev. Lett. 35 372 doi: 10.1109/LED.2013.2296658
[16]	Liu H D, Zheng X G, Zhou Q G, X G, Mcintosh D C and Campbell J C 2009 IEEE J. Quantum Elect. 45 1524 doi: 10.1109/JQE.2009.2022046

Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure

Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure

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