中国物理B ›› 2013, Vol. 22 ›› Issue (11): 118503-118503.doi: 10.1088/1674-1056/22/11/118503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector

李冲, 薛春来, 李传波, 刘智, 成步文, 王启明   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2013-03-12 修回日期:2013-06-05 出版日期:2013-09-28 发布日期:2013-09-28

High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector

Li Chong (李冲), Xue Chun-Lai (薛春来), Li Chuan-Bo (李传波), Liu Zhi (刘智), Cheng Bu-Wen (成步文), Wang Qi-Ming (王启明)   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2013-03-12 Revised:2013-06-05 Online:2013-09-28 Published:2013-09-28
  • Contact: Xue Chun-Lai E-mail:clxue@semi.ac.cn

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摘要： Uni-traveling-carrier photodiodes (UTC-PDs) with ultrafast response and high saturation output are reported. A gradient doping layer and a narrow InP cliff layer were introduced to enhance the saturation and bandwidth characteristics. We measured the dark current, photo response, bandwidth, and saturation current of the fabricated UTC devices. For a 15-μm-diameter device, the dark current was 3.5 nA at a reverse bias of 1 V, and the 3-dB bandwidth was 17.2 GHz at a reverse bias of 5 V, which are comparable to the theoretically values. The maximum responsivity at 1.55 μm was 0.32 A/W. The saturation output current was over 19.0 mA without bias.

关键词: surface-illuminated uni-traveling-carrier photodiode, InP substrate

Abstract: Uni-traveling-carrier photodiodes (UTC-PDs) with ultrafast response and high saturation output are reported. A gradient doping layer and a narrow InP cliff layer were introduced to enhance the saturation and bandwidth characteristics. We measured the dark current, photo response, bandwidth, and saturation current of the fabricated UTC devices. For a 15-μm-diameter device, the dark current was 3.5 nA at a reverse bias of 1 V, and the 3-dB bandwidth was 17.2 GHz at a reverse bias of 5 V, which are comparable to the theoretically values. The maximum responsivity at 1.55 μm was 0.32 A/W. The saturation output current was over 19.0 mA without bias.

Key words: surface-illuminated uni-traveling-carrier photodiode, InP substrate

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
78.55.Cr (III-V semiconductors) 85.30.De (Semiconductor-device characterization, design, and modeling)