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Shu-Fang Ma(马淑芳), Lei Li(李磊), Qing-Bo Kong(孔庆波), Yang Xu(徐阳), Qing-Ming Liu(刘青明), Shuai Zhang(张帅), Xi-Shu Zhang(张西数), Bin Han(韩斌), Bo-Cang Qiu(仇伯仓), Bing-She Xu(许并社), and Xiao-Dong Hao(郝晓东). Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells[J]. 中国物理B, 2023, 32(3): 37801-037801. |
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Xue-Fei Li(李雪飞), Wen-Xian Yang(杨文献), Jun-Hua Long(龙军华), Ming Tan(谭明), Shan Jin(金山), Dong-Ying Wu(吴栋颖), Yuan-Yuan Wu(吴渊渊), and Shu-Long Lu(陆书龙). Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell[J]. 中国物理B, 2023, 32(1): 17801-017801. |
[3] |
Xiaoyu Liu(刘晓宇), Yong Zhang(张勇), Haoran Wang(王皓冉), Haomiao Wei(魏浩淼),Jingtao Zhou(周静涛), Zhi Jin(金智), Yuehang Xu(徐跃杭), and Bo Yan(延波). High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure[J]. 中国物理B, 2023, 32(1): 17305-017305. |
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Zi-Heng Wang(王自衡), Yi-Jun Zhang(张益军), Shi-Man Li(李诗曼), Shan Li(李姗), Jing-Jing Zhan(詹晶晶), Yun-Sheng Qian(钱芸生), Feng Shi(石峰), Hong-Chang Cheng(程宏昌), Gang-Cheng Jiao(焦岗成), and Yu-Gang Zeng(曾玉刚). Temporal response of laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure: Model and simulation[J]. 中国物理B, 2022, 31(9): 98505-098505. |
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Ya-Chao Li(李亚超), Chao Ge(葛超), Peng Wang(汪鹏), Shuang Liu(刘爽), Xiao-Ran Ma(麻晓冉), Bing Wang(王冰), Hai-Ying Song(宋海英), and Shi-Bing Liu(刘世炳). Polarization-dependent ultrafast carrier dynamics in GaAs with anisotropic response[J]. 中国物理B, 2022, 31(6): 67102-067102. |
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Shurui Cao(曹书睿), Ruize Feng(封瑞泽), Bo Wang(王博), Tong Liu(刘桐), Peng Ding(丁芃), and Zhi Jin(金智). Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs[J]. 中国物理B, 2022, 31(5): 58502-058502. |
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Xiaotian Zhu(朱笑天), Bingheng Meng(孟兵恒), Dengkui Wang(王登魁), Xue Chen(陈雪), Lei Liao(廖蕾), Mingming Jiang(姜明明), and Zhipeng Wei(魏志鹏). Improving the performance of a GaAs nanowire photodetector using surface plasmon polaritons[J]. 中国物理B, 2022, 31(4): 47801-047801. |
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Humberto Noverola-Gamas, Luis Manuel Gaggero-Sager, and Outmane Oubram. Nonlinear optical properties in n-type quadruple δ-doped GaAs quantum wells[J]. 中国物理B, 2022, 31(4): 44203-044203. |
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Zhuang-Zhuang Zhao(赵壮壮), Meng Xun(荀孟), Guan-Zhong Pan(潘冠中), Yun Sun(孙昀), Jing-Tao Zhou(周静涛), and De-Xin Wu(吴德馨). Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers[J]. 中国物理B, 2022, 31(3): 34208-034208. |
[10] |
Shan Feng(冯山), Ming Jiang(姜明), Qi-Hang Qiu(邱启航), Xiang-Hua Peng(彭祥花), Hai-Yan Xiao(肖海燕), Zi-Jiang Liu(刘子江), Xiao-Tao Zu(祖小涛), and Liang Qiao(乔梁). First-principles study of stability of point defects and their effects on electronic properties of GaAs/AlGaAs superlattice[J]. 中国物理B, 2022, 31(3): 36104-036104. |
[11] |
Xin Liu(刘欣), Qing-Hao Meng(孟庆昊), Jing Ding(丁晶), Zhi-Chen Bai(白志晨), Jia-Hui Wang(王佳慧), Cong Zhang(张聪), Bo Su(苏波), and Cun-Lin Zhang(张存林). Terahertz generation and detection of LT-GaAs thin film photoconductive antennas excited by lasers of different wavelengths[J]. 中国物理B, 2022, 31(2): 28701-028701. |
[12] |
Ruize Feng(封瑞泽), Bo Wang(王博), Shurui Cao(曹书睿), Tong Liu(刘桐), Yongbo Su(苏永波), Wuchang Ding(丁武昌), Peng Ding(丁芃), and Zhi Jin(金智). Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs[J]. 中国物理B, 2022, 31(1): 18505-018505. |
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Yu-Bin Kang(亢玉彬), Feng-Yuan Lin(林逢源), Ke-Xue Li(李科学), Ji-Long Tang(唐吉龙), Xiao-Bing Hou(侯效兵), Deng-Kui Wang(王登魁), Xuan Fang(方铉), Dan Fang(房丹), Xin-Wei Wang(王新伟), and Zhi-Peng Wei(魏志鹏). Growth of high-crystallinity uniform GaAs nanowire arrays by molecular beam epitaxy[J]. 中国物理B, 2021, 30(7): 78102-078102. |
[14] |
Guo-Feng Wu(武国峰), Jun Wang(王俊), Wei-Rong Chen(陈维荣), Li-Na Zhu(祝丽娜), Yuan-Qing Yang(杨苑青), Jia-Chen Li(李家琛), Chun-Yang Xiao(肖春阳), Yong-Qing Huang(黄永清), Xiao-Min Ren(任晓敏), Hai-Ming Ji(季海铭), and Shuai Luo(罗帅). Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots[J]. 中国物理B, 2021, 30(11): 110201-110201. |
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祁路伟, 刘晓宇, 孟进, 张德海, 周静涛. Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure[J]. 中国物理B, 2020, 29(5): 57306-057306. |